scholarly journals Influence of pulse power amplitude on plasma properties and film deposition in high power pulsed plasma enhanced chemical vapor deposition

2014 ◽  
Vol 32 (3) ◽  
pp. 030602 ◽  
Author(s):  
Daniel Lundin ◽  
Jens Jensen ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
High Power ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Pulse Power ◽  
Pulsed Plasma ◽  
Plasma Properties

scholarly journals Engineering-scale superlubricity of the fingerprint-like carbon films based on high power pulsed plasma enhanced chemical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (116) ◽  
pp. 115092-115100 ◽  
Author(s):  
Zhenbin Gong ◽  
Jing Shi ◽  
Wei Ma ◽  
Bin Zhang ◽  
Junyan Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
High Power ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Pulsed Plasma ◽  
Manufacturing Equipment ◽  
Exciting Application

Engineering scale superlubricity was realized by the fingerprint-like carbon films, which offer exciting application opportunity in vehicles, turbines, and manufacturing equipment.

scholarly journals Correction: Engineering-scale superlubricity of the fingerprint-like carbon films based on high power pulsed plasma enhanced chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 3506-3506 ◽  
Author(s):  
Zhenbin Gong ◽  
Jing Shi ◽  
Wei Ma ◽  
Bin Zhang ◽  
Junyan Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
High Power ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Pulsed Plasma

Correction for ‘Engineering-scale superlubricity of the fingerprint-like carbon films based on high power pulsed plasma enhanced chemical vapor deposition’ by Zhenbin Gong et al., RSC Adv., 2016, 6, 115092–115100.

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 377 ◽  
Author(s):  
G. Stevens ◽  
P. Santos-Filho ◽  
S. Habermehl ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Pathway ◽  
Total Concentration ◽  
Chemical Vapor ◽  
Reaction Model ◽  
Film Deposition ◽  
Growth Surface ◽  
Remote Plasma ◽  
Silicon Nitride Films

ABSTRACTWe have deposited Si-nitride thin films by remote plasma-enhanced chemical-vapor deposition using different combinations of hydrogen and deuterium source gases. In one set of experiments, NH3 and SiH4 were injected downstream from a He plasma and the ratio of NH3 to SiH4 was adjusted so that deposited films contained IR-detectable bonded-H in SiN-H arrangements, but not in Si-H arrangements. Similar results were obtained using the same ND3 to SiD4 flow ratio; these films contained only SiN-D groups. However, films prepared from ND3 and SiH4 displayed both SiN-D and SiN-H groups in essentially equal concentrations establishing that H and D atoms bonded to N are derived from both source gases SiH (D) 4 and NH (D) 3, and further that inter-mixing of H and/or D atoms occurs at the growth surface. This reaction pathway is supported by additional studies in which films were grown from SD4 and ND3 with either i) He or ii) He/H2 mixtures being plasma excited. The films grown from the deuterated source gases without H2, displayed only SiN-D bands, whereas the films grown using the He/H2 mixture displayed both SiN-H and SiN-D bands. The total concentration of N-H and N-D bonds in the films grown from the He/H2 excitation was the same as the concentration of N-D, supporting the surface reaction model. In-situ mass spectrometry provides additional insights in the film deposition reactions.

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