Enhancement of metal oxide deposition rate and quality using pulsed plasma-enhanced chemical vapor deposition at low frequency

2008 ◽  
Vol 26 (5) ◽  
pp. 1213-1217 ◽  
Author(s):  
Michael T. Seman ◽  
David N. Richards ◽  
Pieter C. Rowlette ◽  
Nicholas G. Kubala ◽  
Colin A. Wolden
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxide ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Pulsed Plasma ◽  
Oxide Deposition

Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution

2006 ◽  
Vol 21 (1) ◽  
pp. 88-104 ◽  
Author(s):  
A. Kosarev ◽  
A. Torres ◽  
Y. Hernandez ◽  
R. Ambrosio ◽  
C. Zuniga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Relative Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Optical Measurements ◽  
Conduction Band Edge ◽  
Frequency Plasma

We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H2. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found that the deposition rate increased with Y, maximizing at Y = 1 without dilution. The relative rate of Ge and Si incorporation is affected by dilution. Hydrogen preferentially bonds to silicon. Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge; i.e., the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity γ-factor suggests a local minimum in the density of states at E ≈ 0.33 eV for the films grown with or without H-dilution and E ≈ 0.25 eV for the films with Ar dilution.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

Theoretical Modeling of Chemical Vapor Deposition of Silicon Carbide in a Hot Wall Reactor

1993 ◽  
Vol 335 ◽  
Author(s):  
Feng Gao ◽  
Ray Y. Lin
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Model Analysis ◽  
Gas Mixture ◽  
Kinetic Rate ◽  
Rate Expression ◽  
Cylindrical Coordinate

AbstractA theoretical model, which describes the coupled hydrodynamics, mass transport and chemical reaction, has been developed to simulate chemical vapor deposition (CVD) of silicon carbide (SiC) from gas mixture of methyltrichlorosilane (MTS), hydrogen and argon in a hot wall reactor. In the model analysis, the governing equations were developed in the cylindrical coordinate, and solved numerically by using a finite difference method. A kinetic rate expression of CVD-SiC deposition from the gas mixture was obtained from this study. The deposition rate has an Arrhenius-type dependence on the deposition temperature and is first order with respect to the MTS concentration. Estimated activation energy is 254 kJ/mol. Predicted deposition rate profiles by the model analysis incorporated with the obtained kinetic rate expression showed excellent agreement with experimental data over a variety of applied deposition conditions.

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