Fast aerial image simulations for partially coherent systems by transmission cross coefficient decomposition with analytical kernels

2012 ◽  
Vol 30 (6) ◽  
pp. 06FG03 ◽  
Author(s):  
Peng Gong ◽  
Shiyuan Liu ◽  
Wen Lv ◽  
Xinjiang Zhou
Keyword(s):  
Aerial Image ◽  
Coherent Systems ◽  
Partially Coherent ◽  
Image Simulations

Analysis of partially coherent light propagation through the soft X-ray interference lithography beamline at SSRF

2021 ◽  
Vol 28 (3) ◽  
pp. 902-909
Author(s):  
Xiangyu Meng ◽  
Huaina Yu ◽  
Yong Wang ◽  
Junchao Ren ◽  
Chaofan Xue ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Extreme Ultraviolet ◽  
Aerial Images ◽  
Aerial Image ◽  
Photon Flux ◽  
Coherent Light ◽  
Fringe Visibility ◽  
X Ray ◽  
Partially Coherent ◽  
Partially Coherent Light

The mutual optical intensity (MOI) model is extended to the simulation of the interference pattern produced by extreme ultraviolet lithography with partially coherent light. The partially coherent X-ray propagation through the BL08U1B beamline at Shanghai Synchrotron Radiation Facility is analysed using the MOI model and SRW (Synchrotron Radiation Workshop) method. The fringe intensity at the exposure area is not uniform but has similar envelope lines to Fresnel diffraction, which is explained by the diffraction from the finite grating modelled as a single aperture. By balancing the slit size and photon stop size, the fringe visibility, photon flux and intensity slope can be optimized. Further analysis shows that the effect of pink light on the aerial images is negligible, whereas the third-harmonic light should be considered to obtain a balance between high fringe visibility and high flux. Two grating interference exposure experiments were performed in the BL08U1B beamline. The aerial image depth showed that the polymethyl methacrylate photoresist depth was determined by the X-ray coherence properties.

Quantifying EUV imaging tolerances for the 70-, 50-, 35-nm modes through rigorous aerial image simulations

2001 ◽  
Author(s):  
Christof G. Krautschik ◽  
Masaaki Ito ◽  
Iwao Nishiyama ◽  
Takashi Mori
Keyword(s):  
Aerial Image ◽  
Image Simulations ◽  
Euv Imaging

Aerial image simulations of soft and phase defects in 193-nm lithography for 100-nm node

2002 ◽  
Author(s):  
Frank A. Driessen ◽  
Paul van Adrichem ◽  
Vicky Philipsen ◽  
Rik M. Jonckheere ◽  
Hua-Yu Liu ◽  
...  
Keyword(s):  
Aerial Image ◽  
193 Nm ◽  
Image Simulations

Computers and diffraction analysis

1989 ◽  
Vol 47 ◽  
pp. 44-45
Author(s):  
J. A. Eades
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Diffraction Analysis ◽  
Electron Diffraction Analysis ◽  
Image Simulation ◽  
Correct Interpretation ◽  
High Profile ◽  
High Resolution Images ◽  
Image Simulations

For well over two decades computers have played an important role in electron microscopy; they now pervade the whole field - as indeed they do in so many other aspects of our lives. The initial use of computers was mainly for large (as it seemed then) off-line calculations for image simulations; for example, of dislocation images.Image simulation has continued to be one of the most notable uses of computers particularly since it is essential to the correct interpretation of high resolution images. In microanalysis, too, the computer has had a rather high profile. In this case because it has been a necessary part of the equipment delivered by manufacturers. By contrast the use of computers for electron diffraction analysis has been slow to prominence. This is not to say that there has been no activity, quite the contrary; however it has not had such a great impact on the field.

A method for direct measurement of specimen noise in HREM images

1993 ◽  
Vol 51 ◽  
pp. 458-459
Author(s):  
Sidnei Paciornik ◽  
Roar Kilaas ◽  
Ulrich Dahmen ◽  
Michael Adrian O'Keefe
Keyword(s):  
Random Noise ◽  
Image Interpretation ◽  
Thin Foil ◽  
High Resolution Electron Microscopy ◽  
Black Dot ◽  
Atomic Column ◽  
Amorphous Oxide ◽  
Resolution Electron ◽  
Imaging Conditions ◽  
Image Simulations

High resolution electron microscopy (HREM) is a primary tool for studying the atomic structure of defects in crystals. However, the quantitative analysis of defect structures is often seriously limited by specimen noise due to contamination or oxide layers on the surfaces of a thin foil.For simple monatomic structures such as fcc or bcc metals observed in directions where the crystal projects into well-separated atomic columns, HREM image interpretation is relatively simple: under weak phase object, Scherzer imaging conditions, each atomic column is imaged as a black dot. Variations in intensity and position of individual image dots can be due to variations in composition or location of atomic columns. Unfortunately, both types of variation may also arise from random noise superimposed on the periodic image due to an amorphous oxide or contamination film on the surfaces of the thin foil. For example, image simulations have shown that a layer of amorphous oxide (random noise) on the surfaces of a thin foil of perfect crystalline Si can lead to significant shifts in image intensities and centroid positions for individual atomic columns.

Atomic chemistry by HREM and image simulations?

1986 ◽  
Vol 44 ◽  
pp. 828-829
Author(s):  
J.M. Howe ◽  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Structural Information ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Image Simulations

The technique of high-resolution electron microscopy (HREM) is invaluable to the materials scientist because it allows examination of microstructural features at levels of resolution that are unobtainable by most other methods. Although the structural information which can be determined by HREM and accompanying image simulations has been well documented in the literature, there have only been a few cases where this technique has been used to reveal the chemistry of individual columns or planes of atoms, as occur in segregated and ordered materials.

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