Reaction mechanisms of oxygen plasma interaction with organosilicate low-k materials containing organic crosslinking groups

2012 ◽  
Vol 30 (6) ◽  
pp. 061302 ◽  
Author(s):  
Mrunalkumar Chaudhari ◽  
Jincheng Du
Keyword(s):  
Reaction Mechanisms ◽  
Oxygen Plasma ◽  
Plasma Interaction ◽  
Low K

A Pretreatment Technique to Improvement the Ashing Resistance of Low K Spin-On-Polymer (SOP)

1999 ◽  
Vol 565 ◽  
Author(s):  
Kow-Ming Chang ◽  
Ji-Yi Yang ◽  
Yu-Hsun Chang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Thickness Variation ◽  
Gap Filling ◽  
Treatment Technology ◽  
Cross Sectional ◽  
X Ray ◽  
Significant Damage ◽  
Ion Treatment ◽  
Low K

AbstractThe oxygen plasma via resists strip process cause significant damage to organic SOP, thus limiting its inter-level dielectric application. A simple treatment technology using reactive ion is proposed to reform the SOP surface. The reactive ion modification of the SOP can improve the resistance towards oxygen plasma. This is owing to the carbon atom absence in the SOP's surface area. The measurements of Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), stress, thickness variation, Scanning Electron Microscope (SEM) cross-sectional view for gap filling and dielectric constant show that SOP with reactive ion treatment (RIT) has better quality for non-etch-back process than SOP without RIT.

Plasma etching of organic low-dielectric-constant polymers: comparative analysis

1998 ◽  
Vol 511 ◽  
Author(s):  
M. R. Baklanov ◽  
S. Vanhaelemeersch ◽  
C. Alaerts ◽  
K. Maex
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
Oxygen Plasma ◽  
Pure Oxygen ◽  
Low Dielectric Constant ◽  
Fluorine Concentration ◽  
Practical Applications ◽  
Low Dielectric ◽  
Low K ◽  
Plasma Afterglow

ABSTRACTThe etch characteristics of the low-k dielectrics DVS BCB (BCB hereafter) and SILK in oxygen/fluorine plasmas are studied. In an O2/NF3 plasma afterglow, the etch rate of both polymers first increase linearly with increasing NF3 concentration, then decreases monotonously. A fluorine plasma afterglow does not etch either BCB nor SILK but strongly changes their chemical and optical properties. Reactive ion etching (RIE) of the polymers shows a different behaviour. The etch rate of SILK in a pure oxygen plasma is maximal, but BCB is etched slowly. The fluorine additives increase the etch rate of BCB. The etch rate of SILK decreases with increasing fluorine concentration. RIE in a pure SF6 plasma shows good etch characteristics and can be used for some practical applications. Mechanisms of the reactions are discussed.

Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics

2008 ◽  
Vol 93 (19) ◽  
pp. 192909 ◽  
Author(s):  
H. Shi ◽  
J. Bao ◽  
R. S. Smith ◽  
H. Huang ◽  
J. Liu ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Silicate Glass ◽  
Oxygen Plasma ◽  
Low K

Oxygen Plasma Resistance of Low-k Organosilica Glass Films

2001 ◽  
Vol 4 (3) ◽  
pp. G31 ◽  
Author(s):  
Takeshi Furusawa ◽  
Daisuke Ryuzaki ◽  
Ryo Yoneyama ◽  
Yoshio Homma ◽  
Kenji Hinode
Keyword(s):  
Oxygen Plasma ◽  
Plasma Resistance ◽  
Low K ◽  
Glass Films

CMP of Low-k Methylsilsesquiazane with Oxygen Plasma Treatment for Multilevel Interconnect Applications

2004 ◽  
Vol 7 (6) ◽  
pp. G122 ◽  
Author(s):  
T. C. Chang ◽  
T. M. Tsai ◽  
P. T. Liu ◽  
C. W. Chen ◽  
S. T. Yan ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Low K
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