Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics

2008 ◽  
Vol 93 (19) ◽  
pp. 192909 ◽  
Author(s):  
H. Shi ◽  
J. Bao ◽  
R. S. Smith ◽  
H. Huang ◽  
J. Liu ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Silicate Glass ◽  
Oxygen Plasma ◽  
Low K

scholarly journals Preparation and characterization of novel naphthyl epoxy resin containing 4-fluorobenzoyl side chains for low-k dielectrics application

RSC Advances ◽  
2017 ◽  
Vol 7 (85) ◽  
pp. 53970-53976 ◽  
Author(s):  
Tianyi Na ◽  
Hao Jiang ◽  
Liang Zhao ◽  
Chengji Zhao
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Epoxy Resin ◽  
Epoxy Resins ◽  
Side Chains ◽  
The Novel ◽  
Lower Dielectric Constant ◽  
Low K

The novel naphthyl epoxy resin was synthesized and cured with MeHHPA. It showed significantly lower dielectric constant and dielectric loss than other commercial epoxy resins due to the introduction of fluorine on the side chains.

Novel Periodic Nanoporous Silicate Glass With High Structural Stability as Low-k Thin Film

2002 ◽  
Vol 716 ◽  
Author(s):  
Yoshiaki Oku ◽  
Norikazu Nishiyama ◽  
Shunsuke Tanaka ◽  
Korekazu Ueyama ◽  
Nobuhiro Hata ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Structural Stability ◽  
Silicate Glass ◽  
Porous Silica ◽  
Silica Film ◽  
Peak Position ◽  
Nanoporous Silica ◽  
High Structural Stability ◽  
Low K

AbstractWe have recently developed novel periodic nanoporous silicate glass with high structural stability as low-k thin film by spin-coating method. Periodic porous silicate glass films developed so far cause structural shrinkage (10>∼20% or more) by annealing the spin-coated films. In this investigation we adopt vapor-phase TEOS (tetraethoxysilane)-treatment before anneal. Our novel nanoporous film shows little shift of XRD peak position after annealed at 673K, indicating both the ultimate mechanical strength and the minimization of stress in the interface between the prepared film and the underlying substrate. Such a shrinkage-free periodic nanoporous silica film can possess higher VBD (break down voltage) and lower ILeak (leakage current). In this article we estimate structural properties (including information on pores introduced intentionally) by XRD and TEM observation, and electrical properties (dielectric constant, VBD and ILeak) by IV and CV measurement of this special-treated periodic nanoporous silica film. The dielectric constant of the thus prepared periodic porous silica film with silylation after calcination was evaluated to be around 1.8 at 100kHz.

Role of copper in time dependent dielectric breakdown of porous organo-silicate glass low-k materials

2011 ◽  
Vol 99 (22) ◽  
pp. 222110 ◽  
Author(s):  
Larry Zhao ◽  
Marianna Pantouvaki ◽  
Kristof Croes ◽  
Zsolt Tőkei ◽  
Yohan Barbarin ◽  
...  
Keyword(s):  
Silicate Glass ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown ◽  
Low K

A Pretreatment Technique to Improvement the Ashing Resistance of Low K Spin-On-Polymer (SOP)

1999 ◽  
Vol 565 ◽  
Author(s):  
Kow-Ming Chang ◽  
Ji-Yi Yang ◽  
Yu-Hsun Chang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Thickness Variation ◽  
Gap Filling ◽  
Treatment Technology ◽  
Cross Sectional ◽  
X Ray ◽  
Significant Damage ◽  
Ion Treatment ◽  
Low K

AbstractThe oxygen plasma via resists strip process cause significant damage to organic SOP, thus limiting its inter-level dielectric application. A simple treatment technology using reactive ion is proposed to reform the SOP surface. The reactive ion modification of the SOP can improve the resistance towards oxygen plasma. This is owing to the carbon atom absence in the SOP's surface area. The measurements of Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), stress, thickness variation, Scanning Electron Microscope (SEM) cross-sectional view for gap filling and dielectric constant show that SOP with reactive ion treatment (RIT) has better quality for non-etch-back process than SOP without RIT.

Periodic Mesoporous Silicate Glass as Low-k Thin Film

2001 ◽  
Author(s):  
Yoshiaki Oku ◽  
Akira Kamisawa ◽  
Norikazu Nishiyama ◽  
Korekazu Ueyama
Keyword(s):  
Thin Film ◽  
Silicate Glass ◽  
Mesoporous Silicate ◽  
Low K

Plasma etching of organic low-dielectric-constant polymers: comparative analysis

1998 ◽  
Vol 511 ◽  
Author(s):  
M. R. Baklanov ◽  
S. Vanhaelemeersch ◽  
C. Alaerts ◽  
K. Maex
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
Oxygen Plasma ◽  
Pure Oxygen ◽  
Low Dielectric Constant ◽  
Fluorine Concentration ◽  
Practical Applications ◽  
Low Dielectric ◽  
Low K ◽  
Plasma Afterglow

ABSTRACTThe etch characteristics of the low-k dielectrics DVS BCB (BCB hereafter) and SILK in oxygen/fluorine plasmas are studied. In an O2/NF3 plasma afterglow, the etch rate of both polymers first increase linearly with increasing NF3 concentration, then decreases monotonously. A fluorine plasma afterglow does not etch either BCB nor SILK but strongly changes their chemical and optical properties. Reactive ion etching (RIE) of the polymers shows a different behaviour. The etch rate of SILK in a pure oxygen plasma is maximal, but BCB is etched slowly. The fluorine additives increase the etch rate of BCB. The etch rate of SILK decreases with increasing fluorine concentration. RIE in a pure SF6 plasma shows good etch characteristics and can be used for some practical applications. Mechanisms of the reactions are discussed.

An effective strategy for the preparation of intrinsic low-k and ultralow-loss dielectric polysiloxanes at high frequency by introducing trifluoromethyl groups into the polymers

2020 ◽  
Vol 11 (38) ◽  
pp. 6163-6170
Author(s):  
Fengping Liu ◽  
Xingrong Chen ◽  
Linxuan Fang ◽  
Jing Sun ◽  
Qiang Fang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Frequency ◽  
Low Dielectric Constant ◽  
Effective Strategy ◽  
Low Dielectric ◽  
5 Ghz ◽  
Low K ◽  
Trifluoromethyl Groups

Two new CF3-containing polysiloxanes with low dielectric constant (Dk) and dielectric loss (Df ) at a high frequency of 5 GHz were reported. The sample with two −CF3 groups exhibits better dielectric properties with Dk of 2.53 and ultralow Df of 1.66 × 10−3.

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