A Pretreatment Technique to Improvement the Ashing Resistance of Low K Spin-On-Polymer (SOP)

1999 ◽  
Vol 565 ◽  
Author(s):  
Kow-Ming Chang ◽  
Ji-Yi Yang ◽  
Yu-Hsun Chang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Thickness Variation ◽  
Gap Filling ◽  
Treatment Technology ◽  
Cross Sectional ◽  
X Ray ◽  
Significant Damage ◽  
Ion Treatment ◽  
Low K

AbstractThe oxygen plasma via resists strip process cause significant damage to organic SOP, thus limiting its inter-level dielectric application. A simple treatment technology using reactive ion is proposed to reform the SOP surface. The reactive ion modification of the SOP can improve the resistance towards oxygen plasma. This is owing to the carbon atom absence in the SOP's surface area. The measurements of Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), stress, thickness variation, Scanning Electron Microscope (SEM) cross-sectional view for gap filling and dielectric constant show that SOP with reactive ion treatment (RIT) has better quality for non-etch-back process than SOP without RIT.

Fuel Formation and Conversion During In-Situ Combustion of Crude Oil

SPE Journal ◽  
2013 ◽  
Vol 18 (06) ◽  
pp. 1217-1228 ◽  
Author(s):  
Hascakir Berna ◽  
Cynthia M. Ross ◽  
Louis M. Castanier ◽  
Anthony R. Kovscek
Keyword(s):  
Oil Recovery ◽  
Photoelectron Spectroscopy ◽  
Combustion Front ◽  
Combustion Products ◽  
Combustion Tube ◽  
Cross Sectional ◽  
In Situ Combustion ◽  
X Ray ◽  
Study Results

Summary In-situ combustion (ISC) is a successful method with great potential for thermal enhanced oil recovery. Field applications of ISC are limited, however, because the process is complex and not well-understood. A significant open question for ISC is the formation of coke or "fuel" in correct quantities that is sufficiently reactive to sustain combustion. We study ISC from a laboratory perspective in 1 m long combustion tubes that allow the monitoring of the progress of the combustion front by use of X-ray computed tomography (CT) and temperature profiles. Two crude oils—12°API (986 kg/m3) and 9°API (1007 kg/m3)—are studied. Cross-sectional images of oil movement and banking in situ are obtained through the appropriate analysis of the spatially and temporally varying CT numbers. Combustion-tube runs are quenched before front breakthrough at the production end, thereby permitting a post-mortem analysis of combustion products and, in particular, the fuel (coke and coke-like residues) just downstream of the combustion front. Fuel is analyzed with both scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). XPS and SEM results are used to identify the shape, texture, and elemental composition of fuel in the X-ray CT images. The SEM and XPS results aid efforts to differentiate among combustion-tube results with significant and negligible amounts of clay minerals. Initial results indicate that clays increase the surface area of fuel deposits formed, and this aids combustion. In addition, comparisons are made of coke-like residues formed during experiments under an inert nitrogen atmosphere and from in-situ combustion. Study results contribute to an improved mechanistic understanding of ISC, fuel formation, and the role of mineral substrates in either aiding or impeding combustion. CT imaging permits inference of the width and movement of the fuel zone in situ.

Analysis of PPMMA films from oxygen plasma using X-ray photoelectron spectroscopy

1994 ◽  
Vol 32 (12) ◽  
pp. 2275-2281 ◽  
Author(s):  
Beena Annie Kuruvilla ◽  
Madhukar Zambre ◽  
Suresh Gosavi ◽  
Sucheta Gorwadkar ◽  
A. Datta ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
X Ray

CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-K Interlayer Dielectrics

2005 ◽  
Vol 863 ◽  
Author(s):  
P. Ryan Fitzpatrick ◽  
Sri Satyanarayana ◽  
Yangming Sun ◽  
John M. White ◽  
John G. Ekerdt
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
K Value ◽  
X Ray ◽  
Dimethylamine Borane ◽  
The Stability ◽  
Low K ◽  
Secondary Ion ◽  
Sims Depth Profiling

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.

scholarly journals Synthesis and characterization of Cr–B–N coatings deposited by reactive arc evaporation

2008 ◽  
Vol 23 (11) ◽  
pp. 3048-3055 ◽  
Author(s):  
K. Polychronopoulou ◽  
J. Neidhardt ◽  
C. Rebholz ◽  
M.A. Baker ◽  
M. O’Sullivan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Partial Pressure ◽  
Photoelectron Spectroscopy ◽  
Columnar Structure ◽  
Elastic Recoil ◽  
Cross Sectional ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Selected Area Electron Diffraction ◽  
Arc Evaporation

Nanocomposite Cr–B–N coatings were deposited from CrB0.2 compound targets by reactive arc evaporation using an Ar/N2 discharge at 500 °C and −20 V substrate bias. Elastic recoil detection (ERDA), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) were used to study the effect of the N2 partial pressure on composition and microstructure of the coatings. Cross-sectional scanning electron microscopy (SEM) showed that the coating morphology changes from a glassy to a columnar structure with increasing N2 partial pressure, which coincides with the transition from an amorphous to a crystalline growth mode. The saturation of N content in the coating confirms the formation of a thermodynamically stable CrN–BN dual-phase structure at higher N2 fractions, exhibiting a maximum in hardness of approximately 29 GPa.

Aqueous Dissolution of Perovskite (CaTiO3): Effects of Surface Damage and [Ca2+] in the Leachant

2005 ◽  
Vol 20 (9) ◽  
pp. 2462-2473 ◽  
Author(s):  
Zhaoming Zhang ◽  
Mark G. Blackford ◽  
Gregory R. Lumpkin ◽  
Katherine L. Smith ◽  
Eric R. Vance
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Mechanical Damage ◽  
Surface Damage ◽  
Dissolution Behavior ◽  
Dissolution Testing ◽  
Cross Sectional ◽  
Intrinsic Dissolution ◽  
X Ray ◽  
Before And After

We have characterized thermally annealed perovskite (CaTiO3) surfaces, both before and after aqueous dissolution testing, using scanning electron microscopy, cross-sectional transmission electron microscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. It was shown that mechanical damage caused by polishing was essentially removed at the CaTiO3 surface by subsequent annealing; such annealed samples were used to study the intrinsic dissolution behavior of perovskite in deionized water at RT, 90 °C, and 150 °C. Our results indicate that, although mechanical damage caused higher Ca release initially, it did not affect the long-term Ca dissolution rate. However, the removal of surface damage by annealing did lead to the subsequent spatial ordering of the alteration product, which was identified as anatase (TiO2) by both x-ray and electron diffraction, on CaTiO3 surfaces after dissolution testing at150 °C. The effect of Ca2+ in the leachant on the dissolution reaction of perovskite at 150 °C was also investigated, and the results suggest that under repository conditions, the release of Ca from perovskite is likely to be significantly slower if Ca2+ is present in ground water.

scholarly journals The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 253 ◽  
Author(s):  
Wei-Chun Chen ◽  
Chao-Te Lee ◽  
James Su ◽  
Hung-Pin Chen
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Film Structure ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
X Ray

Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.

A STUDY OF ALUMINA THIN FILMS GROWN BY LOW PRESSURE MOCVD: XPS AND AES

2002 ◽  
Vol 16 (08) ◽  
pp. 1261-1267 ◽  
Author(s):  
M. P. SINGH ◽  
S. A. SHIVASHANKAR ◽  
T. SHRIPATHI
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Alumina Film ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Low Pressure Mocvd ◽  
Substrate Temperatures

We have studied the chemical composition of alumina ( Al 2 O 3) films grown on Si(100) at different substrate temperatures by metalorganic chemical vapor deposition (MOCVD) using aluminium acetylactonate { Al(acac) 3} as the precursor. We have found that the resulting films of Al 2 O 3 contain substantial amounts of carbon. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical state of carbon present in such films. The XPS spectrum reveals that the carbon present in Al 2 O 3 film is graphitic in nature. Auger electron spectroscopy (AES) was employed to study the distribution of carbon in the Al 2 O 3 films. The AES depth profile reveals that carbon is present throughout the film. The AES study on Al 2 O 3 films corroborates the XPS findings. An investigation of the Al 2 O 3/ Si (100) interface was carried out using cross-sectional transmission electron microscopy (XTEM). The TEM study reveals textured growth of alumina film on Si(100), with very fine grains of alumina embedded in an amorphous carbon-containing matrix.

Chemical Vapor Deposition of Ru and RuO2 for Gate Electrode Applications

2002 ◽  
Vol 716 ◽  
Author(s):  
Filippos Papadatos ◽  
Spyridon Skordas ◽  
Zubin Patel ◽  
Steven Consiglio ◽  
Eric Eisenbraun
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Gate Electrode ◽  
Cross Sectional ◽  
X Ray ◽  
Potential Applications ◽  
Reactive Gases

AbstractIn this work, Ru and RuO2 films have been investigated for potential applications in emerging CMOS gate electrode and memory capacitor bottom electrode applications. Films were deposited on SiO2 using chemical vapor deposition (CVD) and low power plasma assisted CVD (PACVD) in a 200-mm wafer deposition cluster tool using a metal beta-diketonate precursor [Bis (2,2,6,6-tetramethyl-3,5-heptanedionato) (1,5-cyclooctadiene) ruthenium (II)]. Hydrogen and oxygen were employed as the reactive gases to deposit, respectively, Ru and RuO2, over a wafer temperature range from 320°C to 480°C. The resulting film properties were analyzed using cross-sectional scanning electron microscopy (CS-SEM), four point resistance probe, x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Both Ru and RuO2 films could be deposited with minimal carbon concentration (∼5 at. %). The purity of the films was also reflected in the as-deposited resistivity of the films, which was as low as 47 μΩ-cm, and was strongly dependent on processing conditions. In order to assess thermal stability, the films were subsequently annealed in forming gas and oxygen ambients for 60 min at 650°C. It was observed that, generally speaking, CVD RuO2 films were stable, with respect to resistivity, in oxidizing ambients, while annealing in a reducing ambient resulted in significant film densification and reduction of the film resistivities to as low as 43 μΩ-cm. Ru films demonstrated good adhesion after anneals in oxidizing, but not in reducing ambients.

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