Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide

Langmuir ◽  
2010 ◽  
Vol 26 (17) ◽  
pp. 13732-13735 ◽  
Author(s):  
Vikrant R. Rai ◽  
Vincent Vandalon ◽  
Sumit Agarwal
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Reaction Mechanisms ◽  
Oxygen Plasma ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Layer Deposition

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

2012 ◽  
Vol 30 (1) ◽  
pp. 01A127 ◽  
Author(s):  
Annelies Delabie ◽  
Sonja Sioncke ◽  
Jens Rip ◽  
Sven Van Elshocht ◽  
Geoffrey Pourtois ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Semiconductor Substrates

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO2 on H/Si(100)-2×1 Surface

2013 ◽  
Vol 750-752 ◽  
pp. 1052-1056 ◽  
Author(s):  
Guang Fen Zhou ◽  
Jie Ren ◽  
Shao Wen Zhang
Keyword(s):  
Density Functional Theory ◽  
Atomic Layer Deposition ◽  
Adsorption Energy ◽  
Reaction Mechanisms ◽  
Density Functional ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Initial Surface ◽  
Functional Theory ◽  
Layer Deposition

The initial surface reaction mechanisms of atomic layer deposition TiO2on H/Si (100 )-2×1 surface using Ti (OCH3)4and H2O as precursors are investigated by density functional theory. The ALD process is divided into two half-reactions, i.e., Ti (OCH3)4and H2O half-reactions. The adsorption energy of Ti (OCH3)4on H/Si (100)2×1 surface is only-2.4 kJ/mol. The overall reaction of Ti (OCH3)4is exothermic, which indicates that Ti (OCH3)4half-reactions are favorable on thermodynamic. Howerver, H2O half-reactions are endothermic and thermodynamically unfavorable.

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO2 Using Ti(OCH3)4 and H2O as Precursors

2013 ◽  
Vol 785-786 ◽  
pp. 832-836 ◽  
Author(s):  
Guang Fen Zhou ◽  
Jie Ren ◽  
Shao Wen Zhang
Keyword(s):  
Density Functional Theory ◽  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Density Functional ◽  
Surface Reaction ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Initial Surface ◽  
Functional Theory ◽  
Layer Deposition

The initial surface reaction mechanisms of atomic layer depositionTiO2using Ti (OCH3)4and H2O as the precursors are investigated by density functional theory. The ALD process is divided into two half-reactions, i.e., Ti (OCH3)4and H2O half-reactions. The adsorption of Ti (OCH3)4on OH/Si (100)2×1 surface is exothermic. However, the overall reaction of Ti (OCH3)4is endothermic. In addition, H2O half-reactions are endothermic and thermodynamically unfavorable.

Surface reaction mechanisms for atomic layer deposition of silicon nitride

2004 ◽  
Vol 557 (1-3) ◽  
pp. 159-170 ◽  
Author(s):  
Collin Mui ◽  
Yuniarto Widjaja ◽  
Jeung Ku Kang ◽  
Charles B. Musgrave
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Layer Deposition
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