Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers

2012 ◽  
Vol 30 (3) ◽  
pp. 031208 ◽  
Author(s):  
Koichi Higashimine ◽  
Koichi Koyama ◽  
Keisuke Ohdaira ◽  
Hideki Matsumura ◽  
N. Otsuka
Keyword(s):  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Transmission Electron Microscope Analysis ◽  
Electron Microscope Analysis ◽  
Amorphous Si

Understanding the Growth Mechanisms of Tin Oxide Nanowires by Chemical Vapor Deposition

2021 ◽  
Vol 21 (4) ◽  
pp. 2538-2544
Author(s):  
Nguyen Minh Hieu ◽  
Nguyen Hoang Hai ◽  
Mai Anh Tuan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Mapping ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Scanning Transmission

Tin oxides nanowires were prepared by chemical vapor deposition using shadow mask. X-ray diffraction indicated that the products were tetragonal having crystalline structure with lattice constants a = 0.474 nm and c = 0.318 nm. The high-resolution transmission electron microscopy revealed that inter planar spacing is 0.25 nm. The results chemical mapping in scanning transmission electron microscopy so that the two elements of Oxygen and Tin are distributed very homogeneously in nanowires and exhibit no apparent elements separation. A bottom-up mechanism for SnO2 growth process has been proposed to explain the morphology of SnO2 nanowires.

The Optical and Electrical Properties of SiOx(x<2) Thin Films Prepared by Pulsed Laser Deposition Technique

2007 ◽  
Vol 997 ◽  
Author(s):  
Byoung Youl Park ◽  
Sol Lee ◽  
Chang Hyun Bae ◽  
Seung Min Park ◽  
Kyoungwan Park
Keyword(s):  
Pulsed Laser Deposition ◽  
Crystalline Silicon ◽  
Quantum Confinement Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Transmission Electron Microscope Analysis ◽  
Electron Microscope Analysis

AbstractSiOx (x<2) films were deposited in an O2 atmosphere using Si target in a pulsed laser deposition system. Post-annealing process was employed in an O2 atmosphere to form the nanometer-sized Si crystallites embedded in the SiO2 films. The transmission electron microscope analysis shows the existence of crystalline silicon nano-dots with diameters ranging from 2 to 4 nm. Also, the clear separation of Si and SiO2 phases can be seen in the X-ray photoemission spectra. Photoluminescence peak from the annealed films was obtained, which is attributed to the quantum confinement effect of the Si nano-dots. C-V measurements of the metal-oxide-silicon (MOS) structure containing the silicon nano-dots in the oxide layer were performed to investigate the charging/discharging behavior of the silicon nano-dots. The maximum program window of the MOS was measured to be4.1V under ±5V sweep.

scholarly journals FABRICATION OF 2- AND 3-DIMENSIONAL NANOSTRUCTURES

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3207-3213 ◽  
Author(s):  
Hong Jiang ◽  
Camelia N. Borca ◽  
Bo Xu ◽  
Brian W. Robertson
Keyword(s):  
Electron Beam ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Scanning Transmission Electron Microscope ◽  
3 Dimensional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
One Step ◽  
Deposition Conditions

Amongst tools for fabricating periodic and aperiodic nanostructures and nanodevices, electron beam-induced organometallic chemical vapor deposition (E-OMCVD) offers a highly flexible and controllable one-step deposition process. E-OMCVD enables maskless fabrication of nanoscale research and custom structures that have least dimensions near or below 10nm – a scale at which other methods prove difficult or costly. Using the focused electron beam in a modified HB501 field-emission scanning transmission electron microscope (STEM), pads and wires with uniform thickness and well-defined shapes have been defined and deposited. Although conditions for fabricating the smallest deposits have not yet been optimized, the edge acuity (sharpness) of the deposits is consistently as low as 4nm or less and the corresponding smallest wire width is 8nm. Under different deposition conditions, three-dimensional open structured nanonetworks have been fabricated. Results of an investigation of E-OMCVD parameters are presented for the metallocene compound, nickelocene (Ni(C5H5 )2), as source organometallic.

scholarly journals Comparison of Enhanced Photocatalytic Degradation Efficiency and Toxicity Evaluations of CeO2 Nanoparticles Synthesized Through Double-Modulation

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1543
Author(s):  
Jang Hyun Choi ◽  
Jung-A Hong ◽  
Ye Rim Son ◽  
Jian Wang ◽  
Hyun Sung Kim ◽  
...  
Keyword(s):  
Photocatalytic Degradation ◽  
Neutral Red ◽  
Ceo2 Nanoparticles ◽  
Negative Effects ◽  
Transmission Electron ◽  
Diphenyltetrazolium Bromide ◽  
Scanning Transmission ◽  
Transmission Electron Microscope Analysis ◽  
Electron Microscope Analysis ◽  
Stability Issues

We demonstrated that Fe/Cr doped and pH-modified CeO2 nanoparticles (NPs) exhibit enhanced photocatalytic performance as compared to bare CeO2 NPs, using photocatalytic degradation. To assess the toxicity level of these double-modified CeO2 NPs on the human skin, they were introduced into HaCaT cells. The results of our conventional cellular toxicity assays (neutral red uptake and 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide for assays) indicated that Cr@CeOx NPs prompt severe negative effects on the viability of human cells. Moreover, the results obtained by scanning transmission X-ray microscopy and bio-transmission electron microscope analysis showed that most of the NPs were localized outside the nucleus of the cells. Thus, serious genetic toxicity was unlikely. Overall, this study highlights the need to prevent the development of Cr@CeOx NP toxicity. Moreover, further research should aim to improve the photocatalytic properties and activity of these NPs while accounting for their stability issues.

Initial Growth of Metastable Titanium Disilicide at Amorphous Silicide/Crystalline Silicon Interface

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen ◽  
S. Lee
Keyword(s):  
Crystalline Silicon ◽  
Early Stage ◽  
Morphological Evolution ◽  
Growth Front ◽  
Scanning Transmission Electron Microscope ◽  
Initial Growth ◽  
Titanium Disilicide ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission

ABSTRACTInitial stage of growth of metastable titanium disilicide (C49-TiSi2) was investigated by annealing Ti/doped polycrystalline Si bilayers deposited on oxidized Si wafers at 530°C and at a constant heating rate of 10°C/min. Morphological evolution of the C49-TiSi2 phase was studied by cross-sectional transmission electron microscopy (XTEM) and local chemistry was probed with a scanning transmission electron microscope (STEM) equipped with a nanoprobe. At the early stage, the C49-TiSi2 phase nucleates discontinuously along the amorphous silicide (a-TiSix )/crystalline Si (c-Si) interface and then exhibits simultaneous lateral growth and vertical growth. The results are interpretated using a model based upon preferential Si diffusion along interphase boundaries to the growth front.

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