Analysis of ultrathin SiO2 interface layers in chemical vapor deposition of Al2O3 on Si by in situ scanning transmission electron microscopy

2003 ◽  
Vol 83 (6) ◽  
pp. 1187-1189 ◽  
Author(s):  
R. F. Klie ◽  
N. D. Browning ◽  
A. Roy Chowdhuri ◽  
C. G. Takoudis
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Scanning Transmission Electron Microscopy ◽  
Chemical Vapor ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Interface Layers

Understanding the Growth Mechanisms of Tin Oxide Nanowires by Chemical Vapor Deposition

2021 ◽  
Vol 21 (4) ◽  
pp. 2538-2544
Author(s):  
Nguyen Minh Hieu ◽  
Nguyen Hoang Hai ◽  
Mai Anh Tuan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Mapping ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Scanning Transmission

Tin oxides nanowires were prepared by chemical vapor deposition using shadow mask. X-ray diffraction indicated that the products were tetragonal having crystalline structure with lattice constants a = 0.474 nm and c = 0.318 nm. The high-resolution transmission electron microscopy revealed that inter planar spacing is 0.25 nm. The results chemical mapping in scanning transmission electron microscopy so that the two elements of Oxygen and Tin are distributed very homogeneously in nanowires and exhibit no apparent elements separation. A bottom-up mechanism for SnO2 growth process has been proposed to explain the morphology of SnO2 nanowires.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Atomic-resolution Studies of Ca3Co4O9 using in-situ Scanning Transmission Electron Microscopy

2008 ◽  
Vol 14 (S2) ◽  
pp. 436-437 ◽  
Author(s):  
G Yang ◽  
Y Zhao ◽  
K Sader ◽  
A Bleloch ◽  
RF Klie
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
New Mexico ◽  
Scanning Transmission Electron Microscopy ◽  
Atomic Resolution ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

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