Electrical characterization of C-coated nickel silicide nanowires grown on Ni-loaded Si substrate

2004 ◽  
Vol 21 (6) ◽  
pp. 1240-1244 ◽  
Author(s):  
Kyung Sun Lee ◽  
Seung Hyun Lee ◽  
Young Hwan Mo ◽  
Kee Suk Nahm ◽  
Ju Jin Kim ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Nickel Silicide ◽  
Si Substrate

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate

1999 ◽  
Vol 28 (3) ◽  
pp. 225-227 ◽  
Author(s):  
Jipo Huang ◽  
Lianwei Wang ◽  
Qinwo Shen ◽  
Chenglu Lin ◽  
Mikael Östling
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Si Substrate

Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster Beam

1984 ◽  
Vol 37 ◽  
Author(s):  
I. Yamada ◽  
C. J. Palmstrøm ◽  
E. Kennedy ◽  
J. W. Mayer ◽  
H. Inokawa ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Life Time ◽  
Cluster Beam ◽  
Clean Surface ◽  
Si Substrate ◽  
Thermal Stability Of

AbstractEpitaxial Al films have been deposited onto the clean surface of single-crystal Si by ionized cluster beam (ICB) at room temperature. Thermal stability of the film has been examined by SEM, AES depth profiling, ion backscat. tering/channeling, and electrical characterization of the Al-Si interface. It was found that the ICB Al film on Si substrate was remarkably stable up to 550°C although pure Al was used. Alloy penetration at the interface, shift of barrier height, degradation of crystalline quality and development of annealing hillocks on the surface were not observed after the heat treatment. Extremely long electromigration life time was also confirmed. Epitaxial growth on GaAs(100) substrate was attempted and preliminary results are given.

scholarly journals Electrical characterization of low temperature deposited oxide films on ZnO/n-Si substrate

2003 ◽  
Vol 26 (7) ◽  
pp. 693-697 ◽  
Author(s):  
S. K. Nandi ◽  
S. Chatterjee ◽  
S. K. Samanta ◽  
P. K. Bose ◽  
C. K. Maiti
Keyword(s):  
Low Temperature ◽  
Oxide Films ◽  
Electrical Characterization ◽  
Si Substrate

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 569-572
Author(s):  
Jens Eriksson ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Raffaella Lo Nigro ◽  
Giuseppe Moschetti ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Structural Evolution ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
Nanoscale Measurements

This paper reports on the macro- and nanoscale electro-structural evolution, as a function of annealing temperature, of nickel-silicide Ohmic contacts to 3C-SiC, grown on 6H-SiC substrates by a Vapor-Liquid-Solid (VLS) technique. The structural and electrical characterization of the contacts, carried out by combining different techniques, showed a correlation between the annealing temperature and the electrical characteristics in both the macro- and the nanoscale measurements. Increasing the annealing temperature between 600 and 950 °C caused a gradual increase of the uniformity of the nanoscale current-distribution, with an accompanying reduction of the specific contact resistance from 5 x 10-5 to 8.4 x 10-6 Ωcm2. After high temperature annealing (950 °C) the structural composition of the contacts stabilized, as only the Ni2Si phase was detected. A comparison with previous literature findings suggests a superior crystalline quality of the single domain VLS 3C-SiC layers.

Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors

2007 ◽  
Vol 995 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Li-Tao Yang ◽  
Kah-Wee Ang ◽  
Tsung-Yang Liow ◽  
Kian-Ming Tan ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Nickel Silicide ◽  
Cumulative Distribution ◽  
X Ray Diffraction ◽  
Silicon Carbon ◽  
Current Voltage ◽  
First Time ◽  
Nickel Silicon ◽  
Contact Metal

AbstractIn this paper, the material and electrical characteristics of Nickel-Silicon-Carbon (NiSi:C) films were investigated for the first time to ascertain the compatibility of NiSi:C contacts to silicon-carbon (Si:C) source/drain stressors. The incorporation of 1 atomic percent of carbon was found to increase both the Ni2Si-to-NiSi and NiSi-to-NiSi2 transformation temperatures. Our results show that the incorporation of carbon stabilizes the interfacial and surface morphology of NiSi:C films. We speculate that the incorporated carbon segregates into the NiSi:C grain boundaries and suppresses film agglomeration and NiSi-to-NiSi2 phase transformation. X-ray diffraction analysis further revealed that the formed NiSi:C films possessed a preferred orientation. Current-voltage measurements for NiSi and NiSi:C n+/p junctions exhibit similar cumulative distribution for junction leakage indicating that carbon incorporation does not have a detrimental impact on the n+/p junction integrity. Our results suggest that NiSi:C is a suitable self-aligned contact metal silicide to n-channel MOSFETs with SiC S/D stressors in a similar manner to the way in which NiSiGe is used for p-channel MOSFETs with SiGe S/D stressors.

Characterization of Difference Size of IDE Pattern for Formaldehyde Detection Sensor

2015 ◽  
Vol 754-755 ◽  
pp. 917-922 ◽  
Author(s):  
M. Zaki ◽  
Uda Hashim ◽  
Mohd Khairuddin Md Arshad ◽  
M.F.M. Fathil ◽  
A.H. Azman ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Electrical Characterization ◽  
Gas Detection ◽  
Si Substrate ◽  
Hard Mask ◽  
Large Size ◽  
Mask Design ◽  
The Ideal

This paper studies the effect of different gap sizes of IDE pattern on the surface morphology and electrical properties for the formaldehyde detection sensor. Two types of IDE chrome mask are designed to determine the ideal IDE pattern for formaldehyde gas detection by using conventional lithography. In the first method, IDE is transferred onto SiO2layer. In order to ensure that the perfect pattern with minimum defect structure is obtained, the process parameters should be optimized and controlled. In the second method, the aluminium is deposited directly on SiO2/Si substrate by using IDE hard mask design plate. The fabricated IDE pattern is further validated through morphological and electrical characterization. The average gap size of IDE sensor is approximately 100 μm and 400 μm for IDE chrome and IDE hard mask respectively. The latter method is preferable since for formaldehyde gas sensing large size is needed and moreover the process is simple and requires low cost. Characterization of difference IDE pattern is demonstrated by various measurements.

scholarly journals Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

2011 ◽  
Vol 29 (4) ◽  
pp. 041301 ◽  
Author(s):  
Masanaga Fukasawa ◽  
Yoshinori Nakakubo ◽  
Asahiko Matsuda ◽  
Yoshinori Takao ◽  
Koji Eriguchi ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Si Substrate ◽  
Plasma Damage ◽  
O2 Plasma
Sign in / Sign up

Export Citation Format

Share Document