Germanium surface hydrophilicity and low-temperature Ge layer transfer by Ge–SiO2 bonding

2010 ◽  
Vol 28 (4) ◽  
pp. 769-774 ◽  
Author(s):  
Xiaobo Ma ◽  
Weili Liu ◽  
Xiaofeng Du ◽  
Xuyan Liu ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Low Temperature ◽  
Layer Transfer ◽  
Surface Hydrophilicity ◽  
Germanium Surface

Low temperature Si layer transfer by direct bonding and mechanical ion cut

2003 ◽  
Vol 83 (18) ◽  
pp. 3827-3829 ◽  
Author(s):  
Y. Cho ◽  
N. W. Cheung
Keyword(s):  
Low Temperature ◽  
Layer Transfer

A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

2016 ◽  
Vol 37 (9) ◽  
pp. 093004 ◽  
Author(s):  
Shumei Lai ◽  
Danfeng Mao ◽  
Zhiwei Huang ◽  
Yihong Xu ◽  
Songyan Chen ◽  
...  
Keyword(s):  
Plasma Exposure ◽  
Surface Hydrophilicity ◽  
Germanium Surface

Low temperature InP layer transfer

1999 ◽  
Vol 35 (4) ◽  
pp. 341 ◽  
Author(s):  
Q.-Y. Tong ◽  
Y.-L. Chao ◽  
L.-J. Huang ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Layer Transfer

Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

2009 ◽  
Vol 156 (5) ◽  
pp. H307 ◽  
Author(s):  
Xiaobo Ma ◽  
Chao Chen ◽  
Weili Liu ◽  
Xuyan Liu ◽  
Xiaofeng Du ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Surface ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Surface Hydrophilicity ◽  
Plasma Activation

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions

2002 ◽  
Vol 745 ◽  
Author(s):  
Gianni Taraschi ◽  
Arthur J. Pitera ◽  
Lisa M. McGill ◽  
Zhi-Yuan Cheng ◽  
Minjoo L. Lee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Material Removal ◽  
High Mobility ◽  
Layer Transfer ◽  
Strained Si ◽  
Precise Control ◽  
Bonding Structure ◽  
Selective Etch ◽  
Final Layer

ABSTRACTAdvanced CMOS substrates composed of ultra-thin strained-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI. Our pioneering method employed wafer bonding of SiGe virtual substrates (with strained-Si layers) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind-etchback or delamination via implantation. Both methods were found to produce a rough transferred layer, but polishing is unacceptable due to non-uniform material removal across the wafer and the lack of precise control over the final layer thickness. To solve these problems, a strained-Si stop layer was incorporated into the bonding structure. After layer transfer, excess SiGe was removed using a selective etch process, stopping on the strained-Si. Within the context of ultra-thin SSOI and SGOI fabrication, this paper describes recent improvements including metastable stop layers, low temperature wafer bonding, and improved selective SiGe removal.

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