Low-Temperature Direct CVD Oxides to Thermal Oxide Wafer Bonding in Silicon Layer Transfer

2005 ◽  
Vol 8 (1) ◽  
pp. G1 ◽  
Author(s):  
C. S. Tan ◽  
K. N. Chen ◽  
A. Fan ◽  
R. Reif
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Silicon Layer ◽  
Layer Transfer ◽  
Thermal Oxide

High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications

2007 ◽  
Vol 253 (7) ◽  
pp. 3595-3599 ◽  
Author(s):  
R. Singh ◽  
I. Radu ◽  
M. Reiche ◽  
C. Himcinschi ◽  
B. Kuck ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Silicon Layer ◽  
High Density ◽  
Strained Silicon ◽  
Layer Transfer ◽  
Thermal Oxide ◽  
Density Plasma

Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding

2010 ◽  
Vol 39 (10) ◽  
pp. 2233-2236 ◽  
Author(s):  
Ki Yeol Byun ◽  
Isabelle Ferain ◽  
Scott Song ◽  
Susan Holl ◽  
Cindy Colinge
Keyword(s):  
Wafer Bonding ◽  
Crystalline Silicon ◽  
Flexible Substrate ◽  
Silicon Layer ◽  
Single Crystalline Silicon ◽  
Layer Transfer ◽  
Single Crystalline

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions

2002 ◽  
Vol 745 ◽  
Author(s):  
Gianni Taraschi ◽  
Arthur J. Pitera ◽  
Lisa M. McGill ◽  
Zhi-Yuan Cheng ◽  
Minjoo L. Lee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Material Removal ◽  
High Mobility ◽  
Layer Transfer ◽  
Strained Si ◽  
Precise Control ◽  
Bonding Structure ◽  
Selective Etch ◽  
Final Layer

ABSTRACTAdvanced CMOS substrates composed of ultra-thin strained-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI. Our pioneering method employed wafer bonding of SiGe virtual substrates (with strained-Si layers) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind-etchback or delamination via implantation. Both methods were found to produce a rough transferred layer, but polishing is unacceptable due to non-uniform material removal across the wafer and the lack of precise control over the final layer thickness. To solve these problems, a strained-Si stop layer was incorporated into the bonding structure. After layer transfer, excess SiGe was removed using a selective etch process, stopping on the strained-Si. Within the context of ultra-thin SSOI and SGOI fabrication, this paper describes recent improvements including metastable stop layers, low temperature wafer bonding, and improved selective SiGe removal.

Silicon layer transfer using wafer bonding and debonding

2001 ◽  
Vol 30 (7) ◽  
pp. 841-844 ◽  
Author(s):  
Cynthia Colinge ◽  
Brian Roberds ◽  
Brian Doyle
Keyword(s):  
Wafer Bonding ◽  
Silicon Layer ◽  
Layer Transfer

Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding

2006 ◽  
Vol 21 (9) ◽  
pp. 1311-1314 ◽  
Author(s):  
R Singh ◽  
I Radu ◽  
R Scholz ◽  
C Himcinschi ◽  
U Gösele ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Layer Transfer ◽  
Direct Wafer Bonding ◽  
Helium Implantation

A “smarter-cut” approach to low temperature silicon layer transfer

1998 ◽  
Vol 72 (1) ◽  
pp. 49-51 ◽  
Author(s):  
Q.-Y. Tong ◽  
R. Scholz ◽  
U. Gösele ◽  
T.-H. Lee ◽  
L.-J. Huang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Layer ◽  
Layer Transfer
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