Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

2009 ◽  
Vol 156 (5) ◽  
pp. H307 ◽  
Author(s):  
Xiaobo Ma ◽  
Chao Chen ◽  
Weili Liu ◽  
Xuyan Liu ◽  
Xiaofeng Du ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Surface ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Surface Hydrophilicity ◽  
Plasma Activation

Low Temperature MEMS Manufacturing Processes: Plasma Activated Wafer Bonding

2005 ◽  
Vol 872 ◽  
Author(s):  
Viorel Dragoi ◽  
Sharon Farrens
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Annealing Temperature ◽  
New Technology ◽  
Manufacturing Processes ◽  
Low Temperature Plasma ◽  
Standard Process ◽  
Temperature Plasma ◽  
Plasma Activation

AbstractThis paper introduces a new technology: low temperature plasma activated wafer bonding. In this process, the wafers are submitted to a plasma treatment prior to bringing them into contact for bonding. The surface activation allows process temperatures ranging from room temperature to maximum 400°C. For Si direct bonding using plasma activation the Si bulk fracture strength is reached after a thermal annealing of 1 hour at 300°C, much lower than the annealing temperature used for the standard process without plasma activation (∼1100°C). Experimental results illustrating the main benefits of the process are presented. The process was successfully applied also for bonding other materials than silicon.

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