Low temperature Si layer transfer by direct bonding and mechanical ion cut

2003 ◽  
Vol 83 (18) ◽  
pp. 3827-3829 ◽  
Author(s):  
Y. Cho ◽  
N. W. Cheung
Keyword(s):  
Low Temperature ◽  
Layer Transfer

Low temperature InP layer transfer

1999 ◽  
Vol 35 (4) ◽  
pp. 341 ◽  
Author(s):  
Q.-Y. Tong ◽  
Y.-L. Chao ◽  
L.-J. Huang ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Layer Transfer

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions

2002 ◽  
Vol 745 ◽  
Author(s):  
Gianni Taraschi ◽  
Arthur J. Pitera ◽  
Lisa M. McGill ◽  
Zhi-Yuan Cheng ◽  
Minjoo L. Lee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Material Removal ◽  
High Mobility ◽  
Layer Transfer ◽  
Strained Si ◽  
Precise Control ◽  
Bonding Structure ◽  
Selective Etch ◽  
Final Layer

ABSTRACTAdvanced CMOS substrates composed of ultra-thin strained-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI. Our pioneering method employed wafer bonding of SiGe virtual substrates (with strained-Si layers) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind-etchback or delamination via implantation. Both methods were found to produce a rough transferred layer, but polishing is unacceptable due to non-uniform material removal across the wafer and the lack of precise control over the final layer thickness. To solve these problems, a strained-Si stop layer was incorporated into the bonding structure. After layer transfer, excess SiGe was removed using a selective etch process, stopping on the strained-Si. Within the context of ultra-thin SSOI and SGOI fabrication, this paper describes recent improvements including metastable stop layers, low temperature wafer bonding, and improved selective SiGe removal.

Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding

2006 ◽  
Vol 21 (9) ◽  
pp. 1311-1314 ◽  
Author(s):  
R Singh ◽  
I Radu ◽  
R Scholz ◽  
C Himcinschi ◽  
U Gösele ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Layer Transfer ◽  
Direct Wafer Bonding ◽  
Helium Implantation

A “smarter-cut” approach to low temperature silicon layer transfer

1998 ◽  
Vol 72 (1) ◽  
pp. 49-51 ◽  
Author(s):  
Q.-Y. Tong ◽  
R. Scholz ◽  
U. Gösele ◽  
T.-H. Lee ◽  
L.-J. Huang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Layer ◽  
Layer Transfer
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