Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2∕H2∕Ar capacitively coupled plasmas

2010 ◽  
Vol 28 (1) ◽  
pp. 120-127 ◽  
Author(s):  
B. S. Kwon ◽  
J. S. Kim ◽  
N.-E. Lee ◽  
S. K. Lee
Keyword(s):  
Extreme Ultraviolet ◽  
Silicon Oxynitride ◽  
Dual Frequency ◽  
Line Edge Roughness ◽  
Capacitively Coupled ◽  
Edge Roughness ◽  
Coupled Plasmas

scholarly journals Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1493
Author(s):  
Sang-Kon Kim
Keyword(s):  
Field Effect ◽  
Extreme Ultraviolet ◽  
Field Effect Transistors ◽  
Computational Study ◽  
Drain Current ◽  
Extreme Ultraviolet Lithography ◽  
Line Edge Roughness ◽  
Stochastic Fluctuation ◽  
Ultraviolet Lithography ◽  
Edge Roughness

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature size. For LER creation and impacts, better understanding of EUVL process mechanism and LER impacts on fin-field-effect-transistors (FinFETs) performance is important for the development of new resist materials and transistor structure. In this paper, for causes of LER, a modeling of EUVL processes with 5-nm pattern performance was introduced using Monte Carlo method by describing the stochastic fluctuation of exposure due to photon-shot noise and resist blur. LER impacts on FinFET performance were investigated using a compact device method. Electric potential and drain current with fin-width roughness (FWR) based on LER and line-width roughness (LWR) were fluctuated regularly and quantized as performance degradation of FinFETs.

Phase modulation in pulsed dual-frequency capacitively coupled plasmas

2014 ◽  
Vol 115 (23) ◽  
pp. 233303 ◽  
Author(s):  
De-Qi Wen ◽  
Quan-Zhi Zhang ◽  
Wei Jiang ◽  
Yuan-Hong Song ◽  
Annemie Bogaerts ◽  
...  
Keyword(s):  
Phase Modulation ◽  
Dual Frequency ◽  
Capacitively Coupled ◽  
Coupled Plasmas

scholarly journals Low-line edge roughness extreme ultraviolet photoresists of organotin carboxylates

2015 ◽  
Vol 14 (4) ◽  
pp. 043506 ◽  
Author(s):  
Ryan Del Re ◽  
James Passarelli ◽  
Miriam Sortland ◽  
Brian Cardineau ◽  
Yasin Ekinci ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Line Edge Roughness ◽  
Edge Roughness
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