Differential etching behavior between semi-insulating and n-doped 4H-SiC in high-density SF6/O2 inductively coupled plasma

2009 ◽  
Vol 27 (3) ◽  
pp. 456-460 ◽  
Author(s):  
Naoya Okamoto
Keyword(s):  
Inductively Coupled Plasma ◽  
High Density ◽  
Inductively Coupled ◽  
Etching Behavior ◽  
Differential Etching

Nanometer-Scale SOI Based Y-Branch Couplers for High Density Optical Integrated Circuits

2013 ◽  
Vol 562-565 ◽  
pp. 996-1000
Author(s):  
Zhen Zhou ◽  
Zheng Fang Dong ◽  
Li Shuang Feng ◽  
Kun Bo Wang ◽  
Yin Zhou Zhi
Keyword(s):  
Integrated Circuits ◽  
Inductively Coupled Plasma ◽  
Beam Propagation Method ◽  
High Density ◽  
Propagation Loss ◽  
Nanometer Scale ◽  
Optical Integrated Circuits ◽  
Inductively Coupled ◽  
Branch Angle ◽  
Strong Confinement

SOI Ridge nanowire waveguide (RNW) has advantages of strong confinement of optical mode, low propagation loss, small bend radius and fully compatible with CMOS technique, etc. An ultra-compact Y-branch coupler based on SOI RNW was designed and fabricated. Based on the finite-difference beam propagation method (FD-BPM), key parameters of the coupler were analyzed. Then the device was fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) reactive ion etching. Results showed that the propagation loss of RNW was 1.89 dB/mm, and the radiation loss of the coupler with branch angle of 30° was only 0.66 dB. Compared with traditional Y-branch coupler, the proposed structure were more promising for high density optical integrated circuits.

Large volume, high density rf inductively coupled plasma

1987 ◽  
Vol 50 (17) ◽  
pp. 1130-1132 ◽  
Author(s):  
R. W. Boswell ◽  
R. K. Porteous
Keyword(s):  
Large Volume ◽  
Inductively Coupled Plasma ◽  
High Density ◽  
Inductively Coupled
Sign in / Sign up

Export Citation Format

Share Document