Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures

F. Crupi; G. Giusi; G. Iannaccone; P. Magnone; C. Pace; E. Simoen; C. Claeys

doi:10.1063/1.3236637

Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.3236637 ◽

2009 ◽

Vol 106 (7) ◽

pp. 073710 ◽

Cited By ~ 21

Author(s):

F. Crupi ◽

G. Giusi ◽

G. Iannaccone ◽

P. Magnone ◽

C. Pace ◽

...

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Two components of tunneling current in metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.94145 ◽

1983 ◽

Vol 43 (1) ◽

pp. 106-108 ◽

Cited By ~ 66

Author(s):

B. Eitan ◽

A. Kolodny

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Measurements of the widths of transition regions at Si–SiO2 interfaces in metal-oxide–semiconductor structures from quantum oscillations in Fowler–Nordheim tunneling current

Solid State Communications ◽

10.1016/s0038-1098(01)00221-6 ◽

2001 ◽

Vol 119 (2) ◽

pp. 67-71 ◽

Cited By ~ 1

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Oscillations ◽

Semiconductor Structures ◽

Nordheim Tunneling

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Analytical modeling of tunneling current through SiO[sub 2]–HfO[sub 2] stacks in metal oxide semiconductor structures

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3043539 ◽

2009 ◽

Vol 27 (1) ◽

pp. 338 ◽

Cited By ~ 10

Author(s):

J. Coignus ◽

R. Clerc ◽

C. Leroux ◽

G. Reimbold ◽

G. Ghibaudo ◽

...

Keyword(s):

Metal Oxide ◽

Analytical Modeling ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1985976 ◽

2005 ◽

Vol 98 (2) ◽

pp. 024506 ◽

Cited By ~ 6

Author(s):

E. P. Nakhmedov ◽

K. Wieczorek ◽

H. Burghardt ◽

C. Radehaus

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Direct Tunneling Current

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Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.2425290 ◽

2007 ◽

Vol 101 (2) ◽

pp. 024315 ◽

Cited By ~ 23

Author(s):

G. Chakraborty ◽

S. Chattopadhyay ◽

C. K. Sarkar ◽

C. Pramanik

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Silicon Nanocrystals ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Theory of direct tunneling current in metal–oxide–semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1427398 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1400-1409 ◽

Cited By ~ 49

Author(s):

R. Clerc ◽

A. Spinelli ◽

G. Ghibaudo ◽

G. Pananakakis

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

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Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

Applied Physics Letters ◽

10.1063/1.1403658 ◽

2001 ◽

Vol 79 (12) ◽

pp. 1831-1833 ◽

Cited By ~ 9

Author(s):

Jing Wang ◽

Yutao Ma ◽

Lilin Tian ◽

Zhijian Li

Keyword(s):

Metal Oxide ◽

Function Method ◽

Airy Function ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

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IIB-1 two components of tunneling current in metal-oxide-semiconductor structures

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1983.21349 ◽

1983 ◽

Vol 30 (11) ◽

pp. 1570-1571

Author(s):

B. Eitan ◽

A. Kolodny

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Thickness measurements for ultrathin-film insulator metal–oxide–semiconductor structures using Fowler–Nordheim tunneling current oscillations

Journal of Applied Physics ◽

10.1063/1.1321781 ◽

2000 ◽

Vol 88 (11) ◽

pp. 6560-6563 ◽

Cited By ~ 14

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Ultrathin Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Current Oscillations ◽

Thickness Measurements ◽

Nordheim Tunneling

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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

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