The use of ionic liquid ion sources in focused ion beam applications

Author(s):  
Anthony N. Zorzos ◽  
Paulo C. Lozano
2003 ◽  
Vol 74 (4) ◽  
pp. 2288-2292 ◽  
Author(s):  
X. Jiang ◽  
Q. Ji ◽  
A. Chang ◽  
K. N. Leung

Author(s):  
Valery Ray ◽  
Ali Hadjikhani ◽  
Joseph Favata ◽  
Seyedeh Ahmadi ◽  
Sina Shahbazmohamadi

Abstract Widespread adoption and significant developments in Focused Ion Beam technology has made FIB/SEM instrumentation a commonplace sample preparation tool. Fundamental limitations inherent to Ga ion species complicate usage of Ga+ FIB instruments for the modification of semiconductor devices on advanced technology nodes. Said limitations are fueling interest in exploring alternative primary species and ion beam technologies for circuit edit applications. Exploratory tests of etching typical semiconductor materials with Xe ion beams generated from two plasma ion sources confirmed advantages of Xe+ as a potential ion species for gas-assisted etching of semiconductor materials, but also revealed potential complications including, swelling of metal and Xe+ retention within the material arising from excessive Xe ion beam current density.


2013 ◽  
Vol 1575 ◽  
Author(s):  
Mitsuaki Takeuchi ◽  
Takuya Hamaguchi ◽  
Hiromichi Ryuto ◽  
Gikan H Takaoka

ABSTRACTIonic liquid (IL) ion sources with different emitter tip materials and tip numbers were developed and examined on ion beam characteristics with respect to its ILs wettability. As a result of ion current measurements, the most stable emission current was obtained for the graphite emitter tip and the ion current increased with increase of the tip number. The results indicate that the emitter wettability corresponding to the supplying flow rate and the number of emission site play an important role to stabilize and increase the beam current.


Author(s):  
L. C. Chao ◽  
B. K. Lee ◽  
C. J. Chi ◽  
J. Cheng ◽  
I. Chyr ◽  
...  

1999 ◽  
Vol 79 (1-4) ◽  
pp. 225-230 ◽  
Author(s):  
M.K Miller ◽  
S.J Sijbrandij

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