Mini rf-driven ion sources for focused ion beam systems

2003 ◽  
Vol 74 (4) ◽  
pp. 2288-2292 ◽  
Author(s):  
X. Jiang ◽  
Q. Ji ◽  
A. Chang ◽  
K. N. Leung
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Sources

Further Inquiry into Xe Primary Ion Species for Circuit Edit Application

2017 ◽  
Author(s):  
Valery Ray ◽  
Ali Hadjikhani ◽  
Joseph Favata ◽  
Seyedeh Ahmadi ◽  
Sina Shahbazmohamadi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Sources ◽  
Advanced Technology ◽  
Semiconductor Materials ◽  
Beam Current Density ◽  
Fundamental Limitations ◽  
Technology Nodes ◽  
Ion Species

Abstract Widespread adoption and significant developments in Focused Ion Beam technology has made FIB/SEM instrumentation a commonplace sample preparation tool. Fundamental limitations inherent to Ga ion species complicate usage of Ga+ FIB instruments for the modification of semiconductor devices on advanced technology nodes. Said limitations are fueling interest in exploring alternative primary species and ion beam technologies for circuit edit applications. Exploratory tests of etching typical semiconductor materials with Xe ion beams generated from two plasma ion sources confirmed advantages of Xe+ as a potential ion species for gas-assisted etching of semiconductor materials, but also revealed potential complications including, swelling of metal and Xe+ retention within the material arising from excessive Xe ion beam current density.

Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources

1999 ◽  
Vol 17 (6) ◽  
pp. 2791 ◽  
Author(s):  
L. C. Chao ◽  
B. K. Lee ◽  
C. J. Chi ◽  
J. Cheng ◽  
I. Chyr ◽  
...  
Keyword(s):  
Rare Earth ◽  
Liquid Alloy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Sources ◽  
Ion Beam Implantation

A novel approach to gaseous field ion sources for focused ion beam applications

1999 ◽  
Vol 79 (1-4) ◽  
pp. 225-230 ◽  
Author(s):  
M.K Miller ◽  
S.J Sijbrandij
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Sources ◽  
Novel Approach

scholarly journals Cold-Atom Ion Sources for Focused Ion Beam Applications

2017 ◽  
Vol 23 (S1) ◽  
pp. 276-277
Author(s):  
J.J. McClelland ◽  
W.R. McGehee ◽  
V.P. Oleshko ◽  
C.L. Soles ◽  
S. Takeuchi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Cold Atom ◽  
Ion Sources

Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

1993 ◽  
Vol 320 ◽  
Author(s):  
J. Teichert ◽  
L. Bischoff ◽  
E. Hesse ◽  
D. Panknin ◽  
W. Skorupa
Keyword(s):  
Ion Implantation ◽  
Substrate Temperature ◽  
Liquid Alloy ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dose Dependence ◽  
Ion Sources ◽  
Cobalt Ions ◽  
Substrate Heating

ABSTRACTThe maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt sulicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Teichert ◽  
L. Bischoff ◽  
E Hesse ◽  
D. Panknin ◽  
W. Skorupa
Keyword(s):  
Ion Implantation ◽  
Substrate Temperature ◽  
Liquid Alloy ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dose Dependence ◽  
Ion Sources ◽  
Cobalt Ions ◽  
Substrate Heating

ABSTRACTThe maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt suicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

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