Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources

1999 ◽  
Vol 17 (6) ◽  
pp. 2791 ◽  
Author(s):  
L. C. Chao ◽  
B. K. Lee ◽  
C. J. Chi ◽  
J. Cheng ◽  
I. Chyr ◽  
...  
Keyword(s):  
Rare Earth ◽  
Liquid Alloy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Sources ◽  
Ion Beam Implantation

Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

1993 ◽  
Vol 320 ◽  
Author(s):  
J. Teichert ◽  
L. Bischoff ◽  
E. Hesse ◽  
D. Panknin ◽  
W. Skorupa
Keyword(s):  
Ion Implantation ◽  
Substrate Temperature ◽  
Liquid Alloy ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dose Dependence ◽  
Ion Sources ◽  
Cobalt Ions ◽  
Substrate Heating

ABSTRACTThe maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt sulicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Teichert ◽  
L. Bischoff ◽  
E Hesse ◽  
D. Panknin ◽  
W. Skorupa
Keyword(s):  
Ion Implantation ◽  
Substrate Temperature ◽  
Liquid Alloy ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dose Dependence ◽  
Ion Sources ◽  
Cobalt Ions ◽  
Substrate Heating

ABSTRACTThe maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt suicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4046-4048 ◽  
Author(s):  
Hiroki Kondo ◽  
Hirotaka Iwano ◽  
Osamu Nakatsuka ◽  
Kazutaka Kaga ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Hopping Conduction ◽  
Ion Beam Implantation

Mini rf-driven ion sources for focused ion beam systems

2003 ◽  
Vol 74 (4) ◽  
pp. 2288-2292 ◽  
Author(s):  
X. Jiang ◽  
Q. Ji ◽  
A. Chang ◽  
K. N. Leung
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Sources
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