Silicon single-electron transistor with oxide tunnel barriers fabricated using chemical mechanical polishing

2008 ◽  
Vol 26 (6) ◽  
pp. 2587-2591 ◽  
Author(s):  
Vishwanath Joshi ◽  
Alexei O. Orlov ◽  
Gregory L. Snider
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Tunnel Barriers ◽  
Oxide Tunnel

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

A Nanodamascene Process to be used as a Building Block for Nanodevices

2006 ◽  
Vol 961 ◽  
Author(s):  
Christian Dubuc ◽  
Jacques Beauvais ◽  
Dominique Drouin
Keyword(s):  
High Resolution ◽  
Building Block ◽  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Filling Material ◽  
Single Electron Transistors ◽  
Electron Transistors ◽  
Related Process

ABSTRACTWe report a single-electron transistor concept and its related process enabling the fabrication of ultrasmall junction capacitance. The method utilizes a nanodamascene approach where trenches in silicon oxide are covered with a filling material and planarized with chemical mechanical polishing. Single-electron transistors fabricated with this approach were characterized up to 433 K and demonstrated that the nanodamascene process has high resolution, is relatively simple and is highly scalable.

Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4147-4150 ◽  
Author(s):  
Hironobu Fukui ◽  
Minoru Fujishima ◽  
Koichiro Hoh
Keyword(s):  
Schottky Contact ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Tunnel Barriers

Aluminum oxide tunnel barriers for single electron memory devices

2005 ◽  
Vol 36 (3-6) ◽  
pp. 272-276 ◽  
Author(s):  
Kameshwar K. Yadavalli ◽  
Alexei O. Orlov ◽  
Gregory L. Snider ◽  
Jeffrey Elam
Keyword(s):  
Aluminum Oxide ◽  
Single Electron ◽  
Memory Devices ◽  
Tunnel Barriers ◽  
Oxide Tunnel

scholarly journals InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

2016 ◽  
Vol 6 (5) ◽  
Author(s):  
M. Taupin ◽  
E. Mannila ◽  
P. Krogstrup ◽  
V. F. Maisi ◽  
H. Nguyen ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Tunnel Barriers

scholarly journals Metallic single-electron transistor without traditional tunnel barriers

2001 ◽  
Vol 44 (10S) ◽  
pp. 113-116 ◽  
Author(s):  
V A Krupenin ◽  
A B Zorin ◽  
D E Presnov ◽  
M N Savvateev ◽  
J Niemeyer
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Tunnel Barriers
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