Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy

2004 ◽  
Vol 95 (5) ◽  
pp. 340-344 ◽  
Author(s):  
P. Dobrosz ◽  
S. J. Bull ◽  
S. H. Olsen ◽  
A. G. O'Neill
Keyword(s):  
Raman Spectroscopy ◽  
Residual Strain ◽  
Strained Si

Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

2002 ◽  
Vol 738 ◽  
Author(s):  
Koji Usuda ◽  
Tomohisa Mizuno ◽  
Tsutomu Tezuka ◽  
Naoharu Sugiyama ◽  
Yoshihiko Moriyama ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Speed ◽  
Strain Relaxation ◽  
Strained Si ◽  
Beam Electron ◽  
Similar Tendency ◽  
Device Structures ◽  
Before And After ◽  
Low Power Cmos ◽  
Si Films

ABSTRACTStrained-Si-On-Insulator (Strained-SOI) MOSFETs are one of the most promising device structures for high speed and/or low power CMOS. In realizing strained-Si MOS LSI, fabrication of strained-Si MOSFETs with small sizes are indispensable and thus, the investigation of the strain relaxation is an important issue. Therefore, the strain relaxation of strained-SOI mesa islands with small active area was investigated in this study. Thin strained-Si films were grown on thin relaxed SiGe-on-insulator (SGOI) structures (x=0.28). The isolation process was carried out by using chemical-dry-etching (CDE) to fabricate samples with small active areas. Using Raman spectroscopy with resolution of > 1 micron meter, strained-Si islands on SGOI substrates with the size of 5 micron meter square were investigated. Rapid-thermal-annealing (RTA) in N2 atmosphere was performed to study the strain relaxation during heating processes. As a result, it was confirmed that the strained-Si layers grown on relaxed SiGe (x=0.28) before and after mesa isolation, down to 5 micron meter in size, had almost no relaxation after the RTA process at 1000°C. Furthermore, it was confirmed that the nano-beam electron diffraction (NBD) measurement showed similar tendency regarding the strain relaxation.

scholarly journals Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy

2011 ◽  
Vol 4 (2) ◽  
pp. 025701 ◽  
Author(s):  
Hiroaki Hanafusa ◽  
Nobumitsu Hirose ◽  
Akifumi Kasamatsu ◽  
Takashi Mimura ◽  
Toshiaki Matsui ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Strain Distribution ◽  
Distribution Analysis ◽  
Strained Si ◽  
Tip Enhanced Raman Spectroscopy

Residual strain field in indented GaAs

2003 ◽  
Vol 18 (6) ◽  
pp. 1474-1480 ◽  
Author(s):  
Pascal Puech ◽  
François Demangeot ◽  
Paulo Sergio Pizani ◽  
Samuel Wey ◽  
Chantal Fontaine
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Residual Strain ◽  
Strain Field ◽  
Optical Phonons ◽  
Gaas Sample ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Microscope Images ◽  
The One

This paper presents an optical mean to probe carefully the strain field generated by a microindentation on [111]-oriented GaAs sample, using micro-Raman spectroscopy and microphotoluminescence spectroscopy. Raman and photoluminescence signals recorded from the same point of the sample are directly compared. The frequency shift of the longitudinal and transverse optical phonons was analyzed in great detail, revealing unambiguously the presence of both compressive and tensile strains within the indented area. Outside the indentation fingerprint, the magnitude of strain deduced from luminescence measurements was found to be lower than the one determined by Raman scattering. The Raman spectra revealed significant variations of the optical phonons polarizability with the deformation. Finally, atomic force microscope images of the indented zone aid in the interpretation.

Evaluation of Residual Strain and Oxygen Vacancy in Multilayer Ceramic Capacitor Using Laser Raman Spectroscopy

2007 ◽  
Vol 46 (10B) ◽  
pp. 7005-7007 ◽  
Author(s):  
Ken Nishida ◽  
Hiroshi Kishi ◽  
Hiroshi Funakubo ◽  
Hironari Takeuchi ◽  
Takashi Katoda ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Oxygen Vacancy ◽  
Residual Strain ◽  
Laser Raman Spectroscopy ◽  
Multilayer Ceramic Capacitor ◽  
Laser Raman ◽  
Ceramic Capacitor ◽  
Multilayer Ceramic

Thermal Stability of Thin Virtual Substrates for High Performance Devices

2006 ◽  
Vol 913 ◽  
Author(s):  
Sarah H Olsen ◽  
Steve J Bull ◽  
Peter Dobrosz ◽  
Enrique Escobedo-Cousin ◽  
Rimoon Agaiby ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Raman Spectroscopy ◽  
Layer Thickness ◽  
Critical Thickness ◽  
Great Promise ◽  
Initial Growth ◽  
Strained Si ◽  
Strained Layers ◽  
Wide Range ◽  
The Impact

AbstractDetailed investigations of strain generation and relaxation in Si films grown on thin Si0.78Ge0.22 virtual substrates using Raman spectroscopy are presented. Good virtual substrate relaxation (>90%) is achieved by incorporating C during the initial growth stage. The robustness of the strained layers to relaxation is studied following high temperature rapid thermal annealing typical of CMOS processing (800-1050 °C). The impact of strained layer thickness on thermal stability is also investigated. Strain in layers below the critical thickness did not relax following any thermal treatments. However for layers above the critical thickness the annealing temperature at which the onset of strain relaxation occurred appeared to decrease with increasing layer thickness. Strain in Si layers grown on thin and thick virtual substrates having identical Ge composition and epilayer thickness has been compared. Relaxation through the introduction of defects has been assessed through preferential defect etching in order to verify the trends observed. Raman signals have been analysed by calibrated deconvolution and curve-fitting of the spectra peaks. Raman spectroscopy has also been used to study epitaxial layer thickness and the impact of Ge out-diffusion during processing. Improved device performance and reduced self-heating effects are demonstrated in thin virtual substrate devices when fabricated using strained layers below the critical thickness. The results suggest that thin virtual substrates offer great promise for enhancing the performance of a wide range of strained Si devices.

scholarly journals Super-Resolution Raman Spectroscopy by Digital Image Processing

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Motohiro Tomita ◽  
Hiroki Hashiguchi ◽  
Takuya Yamaguchi ◽  
Munehisa Takei ◽  
Daisuke Kosemura ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Spatial Resolution ◽  
Numerical Aperture ◽  
Super Resolution ◽  
Force Model ◽  
Stress Distributions ◽  
Si Substrate ◽  
Resolution Method ◽  
Strained Si ◽  
Edge Force

We demonstrate the results of a strain (stress) evaluation obtained from Raman spectroscopy measurements with the super-resolution method (the so-called super-resolution Raman spectroscopy) for a Si substrate with a patterned SiN film (serving as a strained Si sample). To improve the spatial resolution of Raman spectroscopy, we used the super-resolution method and a high-numerical-aperture immersion lens. Additionally, we estimated the spatial resolution by an edge force model (EFM) calculation. One- and two-dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by super-resolution Raman spectroscopy. The results from both super-resolution Raman spectroscopy and the EFM calculation were compared and were found to correlate well. The best spatial resolution, 70 nm, was achieved by super-resolution Raman measurements with an oil immersion lens. We conclude that super-resolution Raman spectroscopy is a useful method for evaluating stress in miniaturized state-of-the-art transistors, and we believe that the super-resolution method will soon be a requisite technique.

Stress and its Effect on Intermixing in Si1-xGex/Si Superlattices

1994 ◽  
Vol 356 ◽  
Author(s):  
S. M. Prokes
Keyword(s):  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Defect Formation ◽  
Growth Conditions ◽  
External Stress ◽  
X Ray Diffraction ◽  
Strained Si ◽  
X Ray ◽  
Long Period ◽  
Kinetics Of

AbstractInterdiffusion behavior in long-period Si1-xGex/Si as a function of growth conditions and external stress is examined using x-ray diffraction and Raman Spectroscopy. Both symmetrically and asymmetrically-strained superlattices have been examined, and an activation energy for interdiffusion of 3.9 eV and 4.6 eV have been obtained, respectively. In addition, an enhanced interdiffusion has also been measured in an externally stressed asymmetric superlattice. In both cases, enhanced interdiffusion has been measured whenever the Si barrier layers experience tensile stress during annealing. The Raman spectroscopy supports this result, showing an enhanced Ge diffusion into the Si barriers when these barriers are put under tensile stress. This result will be discussed in terms of the kinetics of defect formation and motion in the strained Si barriers.

The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures

2005 ◽  
Vol 200 (5-6) ◽  
pp. 1755-1760 ◽  
Author(s):  
P. Dobrosz ◽  
S.J. Bull ◽  
S.H. Olsen ◽  
A.G. O'Neill
Keyword(s):  
Raman Spectroscopy ◽  
Strain Relaxation ◽  
Strained Si
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