Effects of N2 addition on chemical dry etching of silicon oxide layers in F2∕N2∕Ar remote plasmas

2006 ◽  
Vol 24 (4) ◽  
pp. 1380-1385 ◽  
Author(s):  
J. Y. Hwang ◽  
D. J. Kim ◽  
N.-E. Lee ◽  
Y. C. Jang ◽  
G. H. Bae
Keyword(s):  
Silicon Oxide ◽  
Dry Etching ◽  
Oxide Layers

Role of N2 during chemical dry etching of silicon oxide layers using NF3/N2/Ar remote plasmas

2007 ◽  
Vol 84 (4) ◽  
pp. 560-566 ◽  
Author(s):  
D.J. Kim ◽  
Y.B. Yun ◽  
J.Y. Hwang ◽  
N.-E. Lee ◽  
K.S. Kim ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Dry Etching ◽  
Oxide Layers

Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact

1999 ◽  
Vol 85 (5) ◽  
pp. 2921-2928 ◽  
Author(s):  
Toshiko Mizokuro ◽  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Hikaru Kobayashi
Keyword(s):  
Low Temperature ◽  
Electron Impact ◽  
Silicon Oxide ◽  
Nitrogen Plasma ◽  
Low Energy ◽  
Energy Electron ◽  
Oxide Layers ◽  
Low Energy Electron

Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers

2015 ◽  
Vol 44 (8) ◽  
pp. 523-530 ◽  
Author(s):  
G. Ya. Krasnikov ◽  
N. A. Zaitsev ◽  
I. V. Matyushkin ◽  
S. V. Korobov
Keyword(s):  
Phase Separation ◽  
Cellular Automaton ◽  
Silicon Oxide ◽  
Cellular Automaton Model ◽  
Oxide Layers

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

scholarly journals Experimental studies of thorium ion implantation from pulse laser plasma into thin silicon oxide layers

2018 ◽  
Vol 15 (5) ◽  
pp. 056101 ◽  
Author(s):  
P V Borisyuk ◽  
E V Chubunova ◽  
Yu Yu Lebedinskii ◽  
E V Tkalya ◽  
O S Vasilyev ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Pulse Laser ◽  
Laser Plasma ◽  
Silicon Oxide ◽  
Experimental Studies ◽  
Oxide Layers ◽  
Thin Silicon

Thermal desorption of ultrathin silicon oxide layers on Si(111)

2000 ◽  
Vol 15 (2) ◽  
pp. 160-163 ◽  
Author(s):  
A Iraji-zad ◽  
N Taghavinia ◽  
M Ahadian ◽  
A Mashaei
Keyword(s):  
Thermal Desorption ◽  
Silicon Oxide ◽  
Oxide Layers
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