Role of N2 during chemical dry etching of silicon oxide layers using NF3/N2/Ar remote plasmas

2007 ◽  
Vol 84 (4) ◽  
pp. 560-566 ◽  
Author(s):  
D.J. Kim ◽  
Y.B. Yun ◽  
J.Y. Hwang ◽  
N.-E. Lee ◽  
K.S. Kim ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Dry Etching ◽  
Oxide Layers

Effects of N2 addition on chemical dry etching of silicon oxide layers in F2∕N2∕Ar remote plasmas

2006 ◽  
Vol 24 (4) ◽  
pp. 1380-1385 ◽  
Author(s):  
J. Y. Hwang ◽  
D. J. Kim ◽  
N.-E. Lee ◽  
Y. C. Jang ◽  
G. H. Bae
Keyword(s):  
Silicon Oxide ◽  
Dry Etching ◽  
Oxide Layers

The Role of Silicon Oxide Layers in Luminescence of Ensembles of Silicon Quantum Dots

2001 ◽  
Vol 35 (3) ◽  
pp. 371-380
Author(s):  
Wang Si-Hui ◽  
Qin Guo-Yi ◽  
Ren Shang-Fen ◽  
Qin Guo-Gang
Keyword(s):  
Quantum Dots ◽  
Silicon Oxide ◽  
Silicon Quantum Dots ◽  
Oxide Layers

The role of silicon oxide in the stabilization and magnetoresistance switching of Fe3O4/SiO2/Si heterostructures

2021 ◽  
Vol 271 ◽  
pp. 115248
Author(s):  
Icíar Arnay ◽  
Jesús López-Sánchez ◽  
Eduardo Salas-Colera ◽  
Federico Mompeán ◽  
Adolfo del Campo ◽  
...  
Keyword(s):  
Silicon Oxide

Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact

1999 ◽  
Vol 85 (5) ◽  
pp. 2921-2928 ◽  
Author(s):  
Toshiko Mizokuro ◽  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Hikaru Kobayashi
Keyword(s):  
Low Temperature ◽  
Electron Impact ◽  
Silicon Oxide ◽  
Nitrogen Plasma ◽  
Low Energy ◽  
Energy Electron ◽  
Oxide Layers ◽  
Low Energy Electron

Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers

2015 ◽  
Vol 44 (8) ◽  
pp. 523-530 ◽  
Author(s):  
G. Ya. Krasnikov ◽  
N. A. Zaitsev ◽  
I. V. Matyushkin ◽  
S. V. Korobov
Keyword(s):  
Phase Separation ◽  
Cellular Automaton ◽  
Silicon Oxide ◽  
Cellular Automaton Model ◽  
Oxide Layers

Plasma Chemistries for Dry Etching GaN, AIN, InGaN and InAIN

1996 ◽  
Vol 421 ◽  
Author(s):  
S. J. Pearton ◽  
C. B. Vartuli ◽  
J. W. Lee ◽  
S. M. Donovan ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Critical Factor ◽  
Dry Etching ◽  
Ion Energies ◽  
Volatile Products ◽  
Etch Rates

AbstractEtch rates up to 7,000Å/min. for GaN are obtained in Cl2/H2/Ar or BCl3/Ar ECR discharges at 1–3mTorr and moderate dc biases. Typical rates with HI/H2 are about a factor of three lower under the same conditions, while CH4/H2 produces maximum rates of only ˜2000Å/min. The role of additives such as SF6, N2, H2 or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical ( in forming volatile products with N) or physical ( in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V's in that bondbreaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are ≥75eV.

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

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