Thin oxide-free phosphate films of composition formed on the surface of vanadium metal and characterized by x-ray photoelectron spectroscopy

2006 ◽  
Vol 24 (4) ◽  
pp. 1179-1184 ◽  
Author(s):  
D. J. Asunskis ◽  
P. M. A. Sherwood
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Vanadium Metal ◽  
Thin Oxide

Comparison of High-Purity-Ozone Oxidation on Si(111) and Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kurokawa ◽  
S. Ichimura ◽  
D. W. Moon
Keyword(s):  
Temperature Dependence ◽  
High Purity ◽  
Photoelectron Spectroscopy ◽  
Surface Ozone ◽  
Experimental Chamber ◽  
Oxide Formation ◽  
Ozone Oxidation ◽  
X Ray ◽  
Temperature Range ◽  
Thin Oxide

ABSTRACTThe oxidation of Si(111) and Si(100) surfaces with the high-purity ozone(more than 98 mole %) was investigated with X-ray photoelectron spectroscopy (XPS). Thin oxide less than 3nm thickens was formed in an experimental chamber and the results showed that ozone oxidizes the (111) surface faster than (100) surface. Ozone does not show the temperature dependence on oxidation within the temperature range of 250–500 degree C for both (111) and (100) surfaces. Ozone proceeds the oxide formation at 700 degree C where oxygen does not proceed oxide formation rapidly.

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