X‐ray photoelectron spectroscopy/Ar+ ion profile study of thin oxide layers on InP

1990 ◽  
Vol 8 (5) ◽  
pp. 3669-3675 ◽  
Author(s):  
S. M. Thurgate ◽  
N. E. Erickson
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Layers ◽  
X Ray ◽  
Thin Oxide ◽  
Profile Study

An X-ray photoelectron spectroscopy depth profile study on the InGeNi/(110) cleaved GaAs structure

2018 ◽  
Vol 82 ◽  
pp. 62-66 ◽  
Author(s):  
Constantin Catalin Negrila ◽  
Mihail Florin Lazarescu ◽  
Constantin Logofatu ◽  
Rodica V. Ghita ◽  
Costel Cotirlan
Keyword(s):  
Depth Profile ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Gaas Structure ◽  
Profile Study

Determination of the Thickness of Sio2-Layers on Si by X-Ray Analysis and by X-Ray Photoelectron Spectroscopy

1979 ◽  
Vol 23 ◽  
pp. 223-230
Author(s):  
Maria F. Ebel ◽  
H. Ebel ◽  
J. Wernisch
Keyword(s):  
Photoelectron Spectroscopy ◽  
Count Rate ◽  
Silicon Wafers ◽  
Electron Spectrometer ◽  
Si Substrate ◽  
Oxide Layers ◽  
X Ray ◽  
Information Depth ◽  
Pass Through

It is feasible to investigate the thickness of oxide layers on silicon wafers by X-radiation in the 0.1-10 nm thickness range. For example, X-ray photoelectron spectroscopy (XPS) is a well applicable technique, with information depth of a few nm. Fig. 1 presents the principle of this method. An impinging characteristic X-radiation hν (e.g. Al Kα) count rate ejects Si 2p photoelectrons from the Si-substrate (d), with count rate n2, which, on their way to the electron spectrometer, have to pass through the SiOx-interface (c), the SiO2-layer (b) and the contamination overlayer (a), whereas Si 2p photoelectrons ejected from the SiO2-layer, with count rate n2 have just to penetrate the contamination overlayer. The Si 2p electrons originating from the SiOx-interface, for the situation shown in Fig. 1, can be added to the substrate count rate.

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