Feature scale model of Si etching in SF6∕O2∕HBr plasma and comparison with experiments

2006 ◽  
Vol 24 (2) ◽  
pp. 350-361 ◽  
Author(s):  
Rodolfo Jun Belen ◽  
Sergi Gomez ◽  
Mark Kiehlbauch ◽  
Eray S. Aydil
Keyword(s):  
Scale Model ◽  
Feature Scale ◽  
Hbr Plasma ◽  
Comparison With Experiments

Feature-scale model of Si etching in SF6∕O2 plasma and comparison with experiments

2005 ◽  
Vol 23 (5) ◽  
pp. 1430-1439 ◽  
Author(s):  
Rodolfo Jun Belen ◽  
Sergi Gomez ◽  
David Cooperberg ◽  
Mark Kiehlbauch ◽  
Eray S. Aydil
Keyword(s):  
Scale Model ◽  
Feature Scale ◽  
O2 Plasma ◽  
Comparison With Experiments

Feature-scale model of Si etching in SF6 plasma and comparison with experiments

2005 ◽  
Vol 23 (1) ◽  
pp. 99-113 ◽  
Author(s):  
Rodolfo Jun Belen ◽  
Sergi Gomez ◽  
Mark Kiehlbauch ◽  
David Cooperberg ◽  
Eray S. Aydil
Keyword(s):  
Scale Model ◽  
Feature Scale ◽  
Comparison With Experiments

A feature scale model for chemical mechanical planarization of damascene structures

2004 ◽  
Vol 449 (1-2) ◽  
pp. 192-206 ◽  
Author(s):  
Ravi Saxena ◽  
Dipto G. Thakurta ◽  
Ronald J. Gutmann ◽  
William N. Gill
Keyword(s):  
Chemical Mechanical Planarization ◽  
Scale Model ◽  
Feature Scale

scholarly journals The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition Via a Homogenization Technique

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 399-403 ◽  
Author(s):  
Matthias K. Gobbert ◽  
Timothy S. Cale ◽  
Christian A. Ringhofer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Process Model ◽  
Chemical Vapor ◽  
Reaction Diffusion ◽  
Reaction Diffusion Equation ◽  
Scale Model ◽  
Wafer Surface ◽  
Gaseous Species ◽  
Feature Scale

In the context of semiconductor manufacturing, chemical vapor deposition (CVD) denotes the deposition of a solid from gaseous species via chemical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reaction-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface. The surface is given in general parameterized form. A homoganization technique from asymptotic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results from a mathematical test problem are included.

Mechanisms for plasma etching of RRAM SiO2 with diblock copolymer selectivity

2014 ◽  
Vol 28 (18) ◽  
pp. 1450149 ◽  
Author(s):  
Jie Ge ◽  
Yi Yang ◽  
Xiao-Ning Li ◽  
Tianling Ren
Keyword(s):  
Plasma Etching ◽  
Diblock Copolymer ◽  
Inductively Coupled Plasma ◽  
Random Access ◽  
Flux Ratio ◽  
Critical Dimension ◽  
Scale Model ◽  
Access Memory ◽  
Inductively Coupled ◽  
Feature Scale

To minimize the critical dimension of resistive switching random access memory (RRAM), good anisotropy and selectivity with diblock copolymer are required for silicon dioxide etching. Inductively coupled plasma (ICP) etcher using CHF 3/ H 2 mixture is used for effective etching of SiO 2. In this paper, a commercial software CFD-ACE+ was used to simulate reactor scale and feature scale model of SiO 2, diblock copolymer and Pt . Etch properties of SiO 2 at different chamber conditions were discussed. It was found that etch rate increased at the expense of selectivity as ICP power increased, which was the opposite trend for pressure. Selectivity and anisotropy are achieved at neutral to ion flux ratio 100:1. Moreover, the appropriate overetch time for SiO 2 layer to Pt layer was discussed.

Sign in / Sign up

Export Citation Format

Share Document