2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
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Published By IEEE

9781538648117

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Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354723 ◽

2018 ◽

Cited By ~ 5

Author(s):

C. Medina-Bailon ◽

T. Sadi ◽

M. Nedjalkov ◽

J. Lee ◽

S. Berrada ◽

...

Keyword(s):

Si Nanowire ◽

Nanowire Transistors ◽

Scattering Mechanisms

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Author index

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354778 ◽

2018 ◽

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InSb nanocrystals containing SOI structures: Preparation and properties

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354773 ◽

2018 ◽

Author(s):

Ida E. Tyschenko ◽

Vladimir A. Volodin ◽

Alexander G. Cherkov ◽

Vladimir P. Popov

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2D and 3D TCAD simulation of III-V channel FETs at the end of scaling

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354744 ◽

2018 ◽

Author(s):

P. Aguirre ◽

M. Rau ◽

A. Schenk

Keyword(s):

Tcad Simulation ◽

2D And 3D

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2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354338 ◽

2018 ◽

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Impact of BOX thickness and ground-plane on non-linearity of UTBB FD-SOI MOS transistors

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354769 ◽

2018 ◽

Cited By ~ 1

Author(s):

Mandar S. Bhoir ◽

Nihar R. Mohapatra

Keyword(s):

Ground Plane ◽

Mos Transistors

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Current and shot noise at spin-dependent hopping through magnetic tunnel junctions

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354727 ◽

2018 ◽

Cited By ~ 1

Author(s):

Viktor Sverdlov ◽

Siegfried Selberherr

Keyword(s):

Shot Noise ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions

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On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354745 ◽

2018 ◽

Cited By ~ 1

Author(s):

Nicolo Zagni ◽

Francesco Maria Puglisi ◽

Paolo Pavan ◽

Giovanni Verzellesi

Keyword(s):

Threshold Voltage ◽

Compositional Variations ◽

The Impact

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A noise and RTN-removal smart method for parameters extraction of CMOS aging compact models

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354740 ◽

2018 ◽

Cited By ~ 2

Author(s):

Javier Diaz-Fortuny ◽

Javier Martin-Martinez ◽

Rosana Rodriguez ◽

Montserrat Nafria ◽

Rafael Castro-Lopez ◽

...

Keyword(s):

Parameters Extraction ◽

Compact Models

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Z2-FET memory matrix in 28 nm FDSOI technology

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354341 ◽

2018 ◽

Author(s):

Mukta Singh Parihar ◽

Kyung Hwa Lee ◽

Hyung Jin Park ◽

Carlos Navarro ◽

Joris Lacord ◽

...

Keyword(s):

28 Nm

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2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

Author index

InSb nanocrystals containing SOI structures: Preparation and properties

2D and 3D TCAD simulation of III-V channel FETs at the end of scaling

Contents

Impact of BOX thickness and ground-plane on non-linearity of UTBB FD-SOI MOS transistors

Current and shot noise at spin-dependent hopping through magnetic tunnel junctions

On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs

A noise and RTN-removal smart method for parameters extraction of CMOS aging compact models

Z2-FET memory matrix in 28 nm FDSOI technology

Export Citation Format

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

Author index

InSb nanocrystals containing SOI structures: Preparation and properties

2D and 3D TCAD simulation of III-V channel FETs at the end of scaling

Contents

Impact of BOX thickness and ground-plane on non-linearity of UTBB FD-SOI MOS transistors

Current and shot noise at spin-dependent hopping through magnetic tunnel junctions

On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs

A noise and RTN-removal smart method for parameters extraction of CMOS aging compact models

Z2-FET memory matrix in 28 nm FDSOI technology

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Latest Publications