scholarly journals The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition Via a Homogenization Technique

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 399-403 ◽  
Author(s):  
Matthias K. Gobbert ◽  
Timothy S. Cale ◽  
Christian A. Ringhofer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Process Model ◽  
Chemical Vapor ◽  
Reaction Diffusion ◽  
Reaction Diffusion Equation ◽  
Scale Model ◽  
Wafer Surface ◽  
Gaseous Species ◽  
Feature Scale

In the context of semiconductor manufacturing, chemical vapor deposition (CVD) denotes the deposition of a solid from gaseous species via chemical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reaction-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface. The surface is given in general parameterized form. A homoganization technique from asymptotic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results from a mathematical test problem are included.

Intelligent Process Control of Silicon Nitride Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
Paul S. Bowen ◽  
Steve K. Phelps ◽  
Harry I. Ringermacher ◽  
Richard D. Veltri
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Silicon Nitride ◽  
Process Control ◽  
Real Time ◽  
Vapor Deposition ◽  
Process Model ◽  
Chemical Vapor ◽  
Laser Ultrasonics ◽  
Hierarchical Architecture

AbstractThe chemical vapor deposition of silicon nitride can be used to protect advanced materials and composites from high temperature, corrosive, and oxidative environments. Desired coating characteristics, such as uniformity and morphology, cannot be measured in-situ by traditional sensors due to the adverse conditions within the high-temperature reactor. A control strategy has been developed which utilizes a process model and an advanced laser-based sensor to measure the deposition rate of the silicon nitride coating in real-time. The control system is based on a three level hierarchical architecture which functionally separates the process control into PID, supervisory and advanced sensor-based control. Optimal setpoint schedules for the supervisory level are derived from a quasi-fuzzy logic inverse mapping of the process model. An advanced sensor utilizing laser ultrasonics provides real-time coating thickness estimates. Model bias is characterized for each reactor and is correlated on-line with the sensor's deposit thickness estimate. Deviations from model predictions may result in parametric changes to the process model. New setpoint schedules are then created as input to the supervisory control level by regenerating the inverse map of the updated process model.

Impact of Thermophoresis on Carbon Nanotube Growth by Chemical Vapor Deposition

2008 ◽  
Author(s):  
Andrew C. Lysaght ◽  
Wilson K. S. Chiu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Scale Model ◽  
Reactor Wall ◽  
Flow Conditions ◽  
Energy Equations ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth ◽  
Fully Coupled

Thermophoretic effect on the growth of carbon nanotubes (CNTs) by chemical vapor deposition (CVD) has been investigated using a fully coupled gas-phase and surface chemistry model. This reactor-scale model employs conservation of mass, momentum, species, and energy equations to describe the evolution of hydrogen and hydrocarbon feed streams as they undergo thermal transport and chemical reactions within the CVD reactor. The resulting CNT growth rates on individual catalytic iron nanoparticles located on the reactor wall is predicted by the model as well as steady state velocity, temperature, and concentration fields within the reactor volume and concentrations of species adsorbed onto the nanoparticle surfaces. The effect of thermophoresis on volumetric concentration fields and surface species adsorption for deposition occurring in differing reactor boundary and flow conditions has been investigated to understand the impacts on CNT growth. This investigation is useful in order to optimize reactor design and boundary conditions to promote optimal CNT deposition rates.

Reactive chemical vapor deposition of heteroepitaxial Ti1−xAlxN films

CrystEngComm ◽  
2018 ◽  
Vol 20 (12) ◽  
pp. 1711-1715 ◽  
Author(s):  
F. Mercier ◽  
H. Shimoda ◽  
S. Lay ◽  
M. Pons ◽  
E. Blanquet
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reaction Diffusion ◽  
Single Crystalline ◽  
Diffusion Modelling

A novel methodology combining CVD experiments, nanoscale characterisation and reaction–diffusion modelling demonstrates Ti1−xAlxN epitaxial growth on single crystalline AlN films.

Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2

2002 ◽  
Vol 81 (9) ◽  
pp. 1669-1671 ◽  
Author(s):  
K. P. Bastos ◽  
J. Morais ◽  
L. Miotti ◽  
R. P. Pezzi ◽  
G. V. Soares ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Reaction Diffusion ◽  
Metalorganic Chemical ◽  
Oxygen Reaction

Effect of Thin Films on Radiative Transport in Chemical Vapor Deposition Systems

1999 ◽  
Author(s):  
Sandip Mazumder ◽  
Alfred Kersch
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wave Theory ◽  
Radiative Properties ◽  
Wafer Surface ◽  
Contributing Factors ◽  
Thermal Chemical Vapor Deposition ◽  
Wafer Substrate

Abstract The thermal behavior of a wafer during a Rapid Thermal Chemical Vapor Deposition (RTCVD) process depends on its spectral radiative properties, along with other factors. One of the major contributing factors is the thin film that is deposited on the wafer substrate. The presence of a thin film (of thickness anywhere above 0.1 nm) can drastically alter the radiative properties of the wafer surface, thereby leading to significantly different wafer temperatures. This article presents a model to simulate thin film effects in RTCVD processes. Radiative transfer is modeled using a Monte-Carlo ray-tracing technique. Radiative properties are calculated using fundamental Electromagnetic Wave Theory. Simulation results match remarkably well with experimental data, demonstrating the importance of thin film effects.

Impact of Thermodiffusion on Carbon Nanotube Growth by Chemical Vapor Deposition

2010 ◽  
Vol 132 (8) ◽  
Author(s):  
Andrew C. Lysaght ◽  
Wilson K. S. Chiu
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Diffusion ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Scale Model ◽  
Single Wall Carbon Nanotubes ◽  
Heterogeneous Chemical Reaction ◽  
Energy Equations ◽  
The Impact ◽  
Swnt Growth

Thermal diffusion, the process by which a multicomponent mixture develops a concentration gradient when exposed to a temperature gradient, has been studied in order to understand if its inclusion is warranted in the modeling of single-wall carbon nanotubes (SWNTs) synthesis by thermal chemical vapor deposition (CVD). A fully coupled reactor-scale model employing conservation of mass, momentum, species, and energy equations with detailed gas phase and surface reaction mechanisms has been utilized to describe the evolution of hydrogen and hydrocarbon feed streams as they undergo transport, as well as homogeneous and heterogeneous chemical reaction within a CVD reactor. Steady state velocity, temperature, and concentration fields within the reactor volume are determined, as well as concentrations of adsorbed species and SWNT growth rates. The effect of thermodiffusion in differing reactor conditions has been investigated to understand the impact on SWNT growth. Thermal diffusion can have a significant impact on SWNT growth, and the first approximation of the thermal diffusion factor, based on the Chapman–Enskog molecular theory, is sufficient for modeling thermophoretic behavior within a CVD reactor. This effect can be facilitatory or inhibitory, based on the thermal and mass flux conditions. The results of this investigation are useful in order to optimize model and reactor designs to promote optimal SWNT deposition rates.

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