An integrated plasma equipment-feature scale model for ionized metal physical vapor deposition

2002 ◽  
Author(s):  
Junqing Lu ◽  
M.J. Kushner
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Scale Model ◽  
Feature Scale

scholarly journals The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition Via a Homogenization Technique

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 399-403 ◽  
Author(s):  
Matthias K. Gobbert ◽  
Timothy S. Cale ◽  
Christian A. Ringhofer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Process Model ◽  
Chemical Vapor ◽  
Reaction Diffusion ◽  
Reaction Diffusion Equation ◽  
Scale Model ◽  
Wafer Surface ◽  
Gaseous Species ◽  
Feature Scale

In the context of semiconductor manufacturing, chemical vapor deposition (CVD) denotes the deposition of a solid from gaseous species via chemical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reaction-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface. The surface is given in general parameterized form. A homoganization technique from asymptotic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results from a mathematical test problem are included.

Molecular dynamics-based ion-surface interaction models for ionized physical vapor deposition feature scale simulations

1998 ◽  
Vol 73 (26) ◽  
pp. 3860-3862 ◽  
Author(s):  
Daniel G. Coronell ◽  
David E. Hansen ◽  
Arthur F. Voter ◽  
Chun-Li Liu ◽  
Xiang-Yang Liu ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Surface Interaction ◽  
Interaction Models ◽  
Ionized Physical Vapor Deposition ◽  
Feature Scale

Integrated multi-scale model for ionized plasma physical vapor deposition

2001 ◽  
Vol 90 (1) ◽  
pp. 64-73 ◽  
Author(s):  
V. Arunachalam ◽  
S. Rauf ◽  
D. G. Coronell ◽  
P. L. G. Ventzek
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Scale Model ◽  
Multi Scale

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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