RF and DC characteristics in Al2O3/Si3N4insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Narihiko Maeda; Takashi Makimura; Takashi Maruyama; Chengxin Wang; Masanobu Hiroki; Haruki Yokoyama; Toshiki Makimoto; Takashi Kobayashi; Takatomo Enoki

doi:10.1002/pssa.200565165

RF and DC characteristics in Al2O3/Si3N4insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

physica status solidi (a) ◽

10.1002/pssa.200565165 ◽

2006 ◽

Vol 203 (7) ◽

pp. 1861-1865 ◽

Cited By ~ 5

Author(s):

Narihiko Maeda ◽

Takashi Makimura ◽

Takashi Maruyama ◽

Chengxin Wang ◽

Masanobu Hiroki ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates

Electrochemical and Solid-State Letters ◽

10.1149/1.1626992 ◽

2004 ◽

Vol 7 (1) ◽

pp. G8 ◽

Cited By ~ 10

Author(s):

Y. Irokawa ◽

B. Luo ◽

F. Ren ◽

C.-C. Pan ◽

G.-T. Chen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Cited By ~ 3

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4891258 ◽

2014 ◽

Vol 116 (4) ◽

pp. 044507 ◽

Cited By ~ 29

Author(s):

Chongbiao Luan ◽

Zhaojun Lin ◽

Yuanjie Lv ◽

Jingtao Zhao ◽

Yutang Wang ◽

...

Keyword(s):

Theoretical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

physica status solidi (c) ◽

10.1002/pssc.201100408 ◽

2012 ◽

Vol 9 (3-4) ◽

pp. 911-914 ◽

Cited By ~ 4

Author(s):

Martin Mikulics ◽

Hilde Hardtdegen ◽

Andreas Winden ◽

Alfred Fox ◽

Michel Marso ◽

...

Keyword(s):

Residual Strain ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors

10.1063/1.4848451 ◽

2013 ◽

Cited By ~ 4

Author(s):

Nitin Goyal ◽

Benjamin Iniguez ◽

Tor A. Fjeldly

Keyword(s):

Barrier Height ◽

Barrier Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Surface Barrier ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Anomalous behavior of AlGaN∕GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling

Applied Physics Letters ◽

10.1063/1.2715032 ◽

2007 ◽

Vol 90 (12) ◽

pp. 123505 ◽

Cited By ~ 20

Author(s):

H. F. Sun ◽

C. R. Bolognesi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Anomalous Behavior ◽

Cryogenic Temperatures ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Comparative study on dc characteristics of In0.49Ga0.51P-channel heterostructure field-effect transistors with different gate metals

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/4/322 ◽

2003 ◽

Vol 18 (4) ◽

pp. 319-324 ◽

Cited By ~ 1

Author(s):

Hung-Ming Chuang ◽

Chih-Kai Wang ◽

Kun-Wei Lin ◽

Wen-Hui Chiou ◽

Chun-Yuan Chen ◽

...

Keyword(s):

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors

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