Pattern-dependent microloading and step coverage of silicon nitride thin films deposited in a single-wafer thermal chemical vapor deposition chamber

2005 ◽  
Vol 23 (6) ◽  
pp. 2340 ◽  
Author(s):  
Jacob W. Smith ◽  
Sean M. Seutter ◽  
R. Suryanaryanan Iyer
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Chamber ◽  
Thermal Chemical Vapor Deposition ◽  
Step Coverage

Low Temperature Thermal Chemical Vapor Deposition of Silicon Nitride Thin Films for Microelectronics Applications

1999 ◽  
Vol 606 ◽  
Author(s):  
Spyridon Skordas ◽  
George Sirinakis ◽  
Wen Yu ◽  
Di Wu ◽  
Haralabos Efstathiadis ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Thermal Chemical Vapor Deposition ◽  
Deposition Parameters

AbstractSilicon nitride technology has been incorporated in ultra-large scale integration (ULSI) microchip fabrication, thin film transistors (TFT), solar cells, and many other applications in a rapidly expanding market. Nevertheless, silicon nitride technologies currently in use face considerable limitations. Low pressure chemical vapor deposition (LPCVD) occurs at relatively high temperature (>700 °C) and plasma enhanced chemical vapor deposition (PECVD), although occurring at temperatures below 300 °C, produces hydrogen-rich films and could be self-limiting in terms of conformality and damage to the devices due to ion bombardment. In the present work, successful low temperature thermal chemical vapor deposition (LTCVD) of silicon nitride is reported on 8” silicon wafers. The use of a halide-based silicon precursor, tetraiodosilane (SiI4) has led to the deposition of high quality silicon nitride thin films at temperatures as low as 300 °C.Characterization of resulting film properties has been performed to determine their dependence on deposition parameters by Auger Electron Spectroscopy (AES), Rutherford Backscattering Spectroscopy (RBS), Fourier Transform Infrared (FTIR), Nuclear Reaction Analysis (NRA), Ellipsometry, Capacitance-Voltage (C-V), and Current-Voltage (I-V) measurements.

scholarly journals Synthesis of diamond thin films by atmospheric-pressure thermal chemical vapor deposition and their characterization.

Shinku ◽  
1987 ◽  
Vol 30 (2) ◽  
pp. 60-68
Author(s):  
Yoichi HIROSE ◽  
Yuki TERASAWA ◽  
Kazuya IWASAKI ◽  
Katumi TAKAHASHI ◽  
Kazuo TEZUKA
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Diamond Thin Films
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