scholarly journals Synthesis of diamond thin films by atmospheric-pressure thermal chemical vapor deposition and their characterization.

Shinku ◽  
1987 ◽  
Vol 30 (2) ◽  
pp. 60-68
Author(s):  
Yoichi HIROSE ◽  
Yuki TERASAWA ◽  
Kazuya IWASAKI ◽  
Katumi TAKAHASHI ◽  
Kazuo TEZUKA
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Diamond Thin Films

Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

2016 ◽  
Vol 15 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Hideyuki Watanabe ◽  
Hitoshi Umezawa ◽  
Toyofumi Ishikawa ◽  
Kazuki Kaneko ◽  
Shinichi Shikata ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers ◽  
Diamond Thin Films

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

Atmospheric-Pressure Chemical Vapor Deposition of Group IVb Metal Phosphide Thin Films from Tetrakisdimethylamidometal Complexes and Cyclohexylphosphine

2004 ◽  
Vol 16 (6) ◽  
pp. 1120-1125 ◽  
Author(s):  
Christopher S. Blackman ◽  
Claire J. Carmalt ◽  
Shane A. O'Neill ◽  
Ivan P. Parkin ◽  
Leonardo Apostolico ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Metal Phosphide ◽  
Pressure Chemical

Atmospheric pressure chemical vapor deposition of high silica SiO2–TiO2 antireflective thin films for glass based solar panels

2013 ◽  
Vol 1 (39) ◽  
pp. 6188 ◽  
Author(s):  
Erik R. Klobukowski ◽  
Wyatt E. Tenhaeff ◽  
James W. McCamy ◽  
Caroline S. Harris ◽  
Chaitanya K. Narula
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Solar Panels ◽  
Pressure Chemical ◽  
High Silica
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