Application of rapid thermal chemical vapor deposition (RTCVD): silicon nitride for 0.25 μm processing

2002 ◽  
Author(s):  
M.F. Pas ◽  
R.L. Wise ◽  
P. Tiner ◽  
P. Hey ◽  
S. Hsia ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Low Temperature Thermal Chemical Vapor Deposition of Silicon Nitride Thin Films for Microelectronics Applications

1999 ◽  
Vol 606 ◽  
Author(s):  
Spyridon Skordas ◽  
George Sirinakis ◽  
Wen Yu ◽  
Di Wu ◽  
Haralabos Efstathiadis ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Thermal Chemical Vapor Deposition ◽  
Deposition Parameters

AbstractSilicon nitride technology has been incorporated in ultra-large scale integration (ULSI) microchip fabrication, thin film transistors (TFT), solar cells, and many other applications in a rapidly expanding market. Nevertheless, silicon nitride technologies currently in use face considerable limitations. Low pressure chemical vapor deposition (LPCVD) occurs at relatively high temperature (>700 °C) and plasma enhanced chemical vapor deposition (PECVD), although occurring at temperatures below 300 °C, produces hydrogen-rich films and could be self-limiting in terms of conformality and damage to the devices due to ion bombardment. In the present work, successful low temperature thermal chemical vapor deposition (LTCVD) of silicon nitride is reported on 8” silicon wafers. The use of a halide-based silicon precursor, tetraiodosilane (SiI4) has led to the deposition of high quality silicon nitride thin films at temperatures as low as 300 °C.Characterization of resulting film properties has been performed to determine their dependence on deposition parameters by Auger Electron Spectroscopy (AES), Rutherford Backscattering Spectroscopy (RBS), Fourier Transform Infrared (FTIR), Nuclear Reaction Analysis (NRA), Ellipsometry, Capacitance-Voltage (C-V), and Current-Voltage (I-V) measurements.

Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition

2005 ◽  
Vol 44 (No. 10) ◽  
pp. L328-L330 ◽  
Author(s):  
Atsuhiko Kojima ◽  
Mitsuyasu Shimizu ◽  
Kyeong Chan ◽  
Takafumi Kamimura ◽  
Masatoshi Maeda ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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