Electrical Properties of Ion Implanted Poly (P-Phenylene Sulfide)

1981 ◽  
Vol 7 ◽  
Author(s):  
J.S. Abel ◽  
H. Mazurek ◽  
D.R. Day ◽  
E.W. Maby ◽  
S.D. Senturia ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Ambient Conditions ◽  
Ion Energy ◽  
Energy Fluence ◽  
Novel Technique ◽  
Conductivity Increase ◽  
Enhanced Conductivity ◽  
Phenylene Sulfide

ABSTRACTIon-implantation can increase the electrical conductivity of the polymer poly (p-phenylene sulfide) (PPS) by ~ 14 orders of magnitude. This conductivity increase, which is stable under ambient conditions, is studied as a function of temperature, ion energy, fluence and species, using a novel technique, based on microelectronics processing, capable of accurately measuring conductivities as low as 10−10 (Ω-cm)−1. Mechanisms for the enhanced conductivity of PPS are discussed in relation to our measurements.

Studies on Polyaniline: Polyethyleneterephthalate Films

2006 ◽  
Vol 111 ◽  
pp. 99-102 ◽  
Author(s):  
A.A. Ahmed ◽  
Faiz Mohammad
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Arrhenius Equation ◽  
Great Increase ◽  
Thermooxidative Stability ◽  
Ambient Conditions ◽  
Dc Electrical Conductivity ◽  
The Stability ◽  
Almost All ◽  
Conductivity Retention

The films of polyaniline:polyethyleneterephthalate films were prepared by polymerizing aniline soaked in polyethyleneterephthalate films of different thicknesses. The films were characterized by FTIR as well as for their electrical properties. The electrical properties of the films were observed to be of good quality as almost all the films showed a great increase in their electrical conductivity from insulator to semiconductor region after doping with hydrochloric acid. All the films in their doped state follow the Arrhenius equation for the temperature dependence of electrical conductivity from 35 to 115oC. The thermooxidative stability was studied by thermogravimetry and differential thermal analysis. The stability in terms of dc electrical conductivity retention was also studied under ambient conditions by two slightly different techniques viz. isothermal and cyclic techniques. The dc electrical conductivity of the films was found to be stable below 90oC for all the films under ambient conditions.

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

2014 ◽  
Vol 778-780 ◽  
pp. 575-578 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Aleksey Mikhaylov ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Interface Traps ◽  
Ion Energy ◽  
Residual P ◽  
Conductance Method ◽  
Secondary Ion

The effect of phosphorus (P) on the electrical properties of the 4H-SiC / SiO2interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found fromC-Vmeasurements. Conductance method measurements revealed a significant reduction of density of interface trapsDitwith energyEC- Eit> 0.3 V for P+-implanted samples with [P]interface= 1.5 1018cm-3in the SiC layer at the interface.

Surface Modification of Soda Glass by Recoil Ion Implantation of In2O3.

1985 ◽  
Vol 45 ◽  
Author(s):  
K. C. Cadien ◽  
B. B. Harbison
Keyword(s):  
Surface Modification ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Energy Deposition ◽  
Optical And Electrical Properties ◽  
Deposition Rates ◽  
Ion Energy ◽  
Soda Glass ◽  
Glass Substrates

ABSTRACTRecoil ion implantation of In2O3 into soda glass substrates has been investigated. Increased adhesion results, while the optical and electrical properties are altered. Large energy deposition rates can lead to the reduction of the oxide, thus decreasing visible transmission. Thermal annealing in air results in the recovery of optical and electrical properties. The influence of ion energy and dose on the modification of the glass has been examined.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

Effect of the structure of cellulose acetate membranes on their permeability, electrical conductivity and rejection

1990 ◽  
Vol 55 (12) ◽  
pp. 2933-2939 ◽  
Author(s):  
Hans-Hartmut Schwarz ◽  
Vlastimil Kůdela ◽  
Klaus Richau
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Cellulose Acetate ◽  
Reverse Osmosis ◽  
Water Flux ◽  
Cellulose Acetate Membrane ◽  
Structure Parameters ◽  
Dc Electrical Conductivity ◽  
Cellulose Acetate Membranes

Ultrafiltration cellulose acetate membrane can be transformed by annealing into reverse osmosis membranes (RO type). Annealing brings about changes in structural properties of the membranes, accompanied by changes in their permeability behaviour and electrical properties. Correlations between structure parameters and electrochemical properties are shown for the temperature range 20-90 °C. Relations have been derived which explain the role played by the dc electrical conductivity in the characterization of rejection ability of the membranes in the reverse osmosis, i.e. rRO = (1 + exp (A-B))-1, where exp A and exp B are statistically significant correlation functions of electrical conductivity and salt permeation, or of electrical conductivity and water flux through the membrane, respectively.

scholarly journals Development of a gel dedicated to gel immersion endoscopy

2021 ◽  
Vol 09 (06) ◽  
pp. E918-E924
Author(s):  
Tomonori Yano ◽  
Atsushi Ohata ◽  
Yuji Hiraki ◽  
Makoto Tanaka ◽  
Satoshi Shinozaki ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Porcine Model ◽  
Ex Vivo ◽  
In Vitro Experiments ◽  
Efficacy And Safety ◽  
Coagulative Necrosis ◽  
Novel Technique ◽  
In Vivo Experiments

Abstract Backgrounds and study aims Gel immersion endoscopy is a novel technique to secure the visual field during endoscopy. The aim of this study was to develop a dedicated gel for this technique. Methods To identify appropriate viscoelasticity and electrical conductivity, various gels were examined. Based on these results, the dedicated gel “OPF-203” was developed. Efficacy and safety of OPF-203 were evaluated in a porcine model. Results  In vitro experiments showed that a viscosity of 230 to 1900 mPa·s, loss tangent (tanδ) ≤ 0.6, and hardness of 240 to 540 N/cm2 were suitable. Ex vivo experiments showed electrical conductivity ≤ 220 μS/cm is appropriate. In vivo experiments using gastrointestinal bleeding showed that OPF-203 provided clear visualization compared to water. After electrocoagulation of gastric mucosa in OPF-203, severe coagulative necrosis was not observed in the muscularis but limited to the mucosa. Conclusions OPF-203 is useful for gel immersion endoscopy.

Enhanced electrical conductivity of Au–LaNiO3 nanocomposite thin films by chemical solution deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (94) ◽  
pp. 76783-76787 ◽  
Author(s):  
H. L. Wang ◽  
X. K. Ning ◽  
Z. J. Wang
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Nanocomposite Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Nanocomposite Thin Films ◽  
One Step

Au–LaNiO3 (Au–LNO) nanocomposite films with 3.84 at% Au were firstly fabricated by one-step chemical solution deposition (CSD), and their electrical properties were investigated.

Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Electrical Properties ◽  
Chemical Modification ◽  
Nanowire Array ◽  
Noise Measurement ◽  
Nanowire Arrays ◽  
Interface Traps ◽  
Si Nanowire ◽  
Si Nanowire Array

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

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