High valence‐band offset of GaSbAs‐InAlAs quantum wells grown by molecular beam epitaxy

1992 ◽  
Vol 61 (19) ◽  
pp. 2317-2319 ◽  
Author(s):  
P. W. Yu ◽  
D. C. Reynolds ◽  
B. Jogai ◽  
J. Loehr ◽  
C. E. Stutz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Valence Band ◽  
Molecular Beam ◽  
Band Offset ◽  
Valence Band Offset ◽  
High Valence Band

Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

2012 ◽  
Vol 520 (15) ◽  
pp. 4911-4915 ◽  
Author(s):  
Mahesh Kumar ◽  
Basanta Roul ◽  
Thirumaleshwara N. Bhat ◽  
Mohana K. Rajpalke ◽  
A.T. Kalghatgi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Valence Band ◽  
Molecular Beam ◽  
Band Offset ◽  
Valence Band Offset

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

INSIGHTS ON THE BOUND STATES IN THE STRAINED CdSe–ZnSe SINGLE-QUANTUM WELLS

2008 ◽  
Vol 22 (13) ◽  
pp. 2055-2069 ◽  
Author(s):  
NACIR TIT ◽  
IHAB M. OBAIDAT
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Quantum Confinement ◽  
Bound States ◽  
Axial Strain ◽  
Bound State ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Single Quantum Well

The bound states in the (CdSe) Nw– ZnSe (001) single quantum well are investigated versus the well width (Nw monolayers) and the valence-band offset (VBO). The calculation, based on the sp3s* tight-binding method which includes the spin-orbit interactions, is employed to calculate the band-gap energy (Eg), quantum-confinement energy (EQ), and band structures. It is found that the studied systems possess a vanishing valence-band offset ( VBO ≃ 0) in consistency with the common-anion rule, and a large conduction band offset of about ( CBO ≃ 1 eV ); both of which made the electronic confinement become predominant. The bi-axial strain, on the other hand, remains to control the hole states. Namely, the two highest (spin-degenerate) hole states are found to localize at the two interfaces due to the formation of two similar strain-induced potential dips at these interfaces, each of depth equal to the strain energy ~35 meV. More importantly, the ultrathin CdSe wells (with Nw ≤ 4 monolayers) are found to contain only a single (spin-degenerate) bound state; but by increasing the well width further, a new (spin-degenerate) bound state falls into the well every time Nw hits a multiple of 4 monolayers (more specifically, for 4n+1 ≤ Nw ≤ 4 (n+1), the number of bound states is (n+1), where n is an integer). The rule governing the variation of the quantum-confinement energy EQ versus the well width Nw has been derived. Our theoretical results are in excellent agreement with the available experimental photoluminescence data.

Large valence-band offset in strained-layerInxGa1−xAs-GaAs quantum wells

1987 ◽  
Vol 36 (15) ◽  
pp. 8165-8168 ◽  
Author(s):  
J. Menéndez ◽  
A. Pinczuk ◽  
D. J. Werder ◽  
S. K. Sputz ◽  
R. C. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
A. Hangleiter ◽  
S. Lahmann ◽  
C. Netzel ◽  
U. Rossow ◽  
P. R. C. Kent ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Offset ◽  
Valence Band Edge ◽  
Valence Band Offset ◽  
Time Resolved ◽  
Conduction Band Offset ◽  
Hole Confinement ◽  
Weak Electron

AbstractWe show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions

1996 ◽  
Vol 54 (16) ◽  
pp. R11078-R11081 ◽  
Author(s):  
A. V. Kavokin ◽  
M. A. Kaliteevski ◽  
S. V. Goupalov ◽  
J. D. Berger ◽  
O. Lyngnes ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Excitonic Transitions

Valence band offset in semimagnetic CdTe/(CdMn)To quantum wells

1994 ◽  
Vol 15 (4) ◽  
pp. 503-508 ◽  
Author(s):  
W. Ossau ◽  
B. Kuhn-Heinrich ◽  
A. Waag ◽  
T. Litz ◽  
G. Landwehr
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

Valence band offset of GaAs/GaAs0.68P0.32multiple quantum wells

1993 ◽  
Vol 62 (17) ◽  
pp. 2078-2080 ◽  
Author(s):  
W. Shan ◽  
S. J. Hwang ◽  
J. J. Song ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset
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