In situ fabrication of metal gate/high-κ dielectric gate stacks using a potential lower cost front-end process for the sub-90 nm CMOS technology node

2005 ◽  
Vol 23 (2) ◽  
pp. 437
Author(s):  
Daniel Damjanovic ◽  
Rajendra Singh ◽  
Kelvin F. Poole
Keyword(s):  
Lower Cost ◽  
Cmos Technology ◽  
Gate Stacks ◽  
Metal Gate ◽  
Technology Node ◽  
In Situ Fabrication ◽  
Front End

scholarly journals Review of Nanosheet Transistors Technology

2021 ◽  
Vol 28 (1) ◽  
pp. 40-48
Author(s):  
Firas Agha ◽  
Yasir Naif ◽  
Mohammed Shakib
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Nano Structure ◽  
New Device ◽  
Technology Node ◽  
Structure Of Metal ◽  
Effect Transistor

Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this review, the structure and characteristics of Nano-Sheet FET (NSFET), FinFET and NanoWire FET (NWFET) under 5nm technology node are presented and compared. According to the comparison, the NSFET shows to be more impregnable to mismatch in ON current than NWFET. Furthermore, as comparing with other nanodimensional transistors, the NSFET has the superior control of gate all-around structures, also the NWFET realize lower mismatch in sub threshold slope (SS) and drain induced barrier lowering (DIBL).

Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks

2006 ◽  
Author(s):  
Shinya Horie ◽  
Takashi Minami ◽  
Naomu Kitano ◽  
Motomu Kosuda ◽  
Heiji Watanabe ◽  
...  
Keyword(s):  
Fabrication Method ◽  
Gate Stacks ◽  
In Situ Fabrication ◽  
High K

Advanced front-end processes for the 45nm CMOS technology node

2004 ◽  
Vol 114-115 ◽  
pp. 118-129 ◽  
Author(s):  
E.J.H. Collart ◽  
S.B. Felch ◽  
H. Graoui ◽  
D. Kirkwood ◽  
S. Tallavarjula ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Technology Node ◽  
Front End

Interface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks

2019 ◽  
Vol 6 (3) ◽  
pp. 71-85
Author(s):  
Heiji Watanabe ◽  
Shinya Horie ◽  
Hiroaki Arimura ◽  
Naomu Kitano ◽  
Takashi Minami ◽  
...  
Keyword(s):  
Fabrication Method ◽  
Interface Engineering ◽  
Gate Stacks ◽  
In Situ Fabrication ◽  
High K
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