Interface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks

2019 ◽  
Vol 6 (3) ◽  
pp. 71-85
Author(s):  
Heiji Watanabe ◽  
Shinya Horie ◽  
Hiroaki Arimura ◽  
Naomu Kitano ◽  
Takashi Minami ◽  
...  
Keyword(s):  
Fabrication Method ◽  
Interface Engineering ◽  
Gate Stacks ◽  
In Situ Fabrication ◽  
High K

Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks

2006 ◽  
Author(s):  
Shinya Horie ◽  
Takashi Minami ◽  
Naomu Kitano ◽  
Motomu Kosuda ◽  
Heiji Watanabe ◽  
...  
Keyword(s):  
Fabrication Method ◽  
Gate Stacks ◽  
In Situ Fabrication ◽  
High K

Characterization of morphological and rheological properties of rigid magnetorheological foams via in situ fabrication method

2019 ◽  
Vol 54 (21) ◽  
pp. 13821-13833 ◽  
Author(s):  
Noor Sahirah Muhazeli ◽  
Nur Azmah Nordin ◽  
Saiful Amri Mazlan ◽  
Norhaniza Rizuan ◽  
Siti Aishah Abdul Aziz ◽  
...  
Keyword(s):  
Rheological Properties ◽  
Fabrication Method ◽  
In Situ Fabrication

An In Situ Fabrication of CuGa2 Film on Copper Surface With Improved Tribological Properties

2020 ◽  
Vol 143 (7) ◽  
Author(s):  
Xing Li ◽  
Chao Yan ◽  
Qi Liu ◽  
Guangneng Dong
Keyword(s):  
Chemical Composition ◽  
Liquid Metal ◽  
Surface Morphology ◽  
Tribological Properties ◽  
Copper Surface ◽  
Fabrication Method ◽  
In Situ Fabrication ◽  
Electrochemical Fabrication ◽  
Lubrication Mechanisms

Abstract Interface interaction between gallium-based liquid metal and copper-based materials results in the formation of intermetallic CuGa2 grains. In particular, CuGa2 grains are able to produce a uniform film and the newly formed CuGa2 film holds peculiar characteristics, which have not been fully explored up to now. In this study, we present an electrochemical fabrication method of an in situ CuGa2 film on copper surface. Surface morphology and chemical composition of this film are confirmed. Tribological experiments demonstrate that the CuGa2 film enables good antifriction and antiwear abilities. Furthermore, the lubrication mechanisms of the CuGa2 film are revealed.

Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method

2008 ◽  
Vol 254 (19) ◽  
pp. 6119-6122 ◽  
Author(s):  
Hiroaki Arimura ◽  
Shinya Horie ◽  
Yudai Oku ◽  
Takashi Minami ◽  
Naomu Kitano ◽  
...  
Keyword(s):  
Structural Optimization ◽  
Gate Dielectrics ◽  
Fabrication Method ◽  
High K
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