2012 13th International Conference on Ultimate Integration on Silicon (ULIS)
Latest Publications

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Published By IEEE

9781467301923, 9781467301916, 9781467301909

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Intrinsic gate delay and energy-delay product in junctionless nanowire transistors

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193373 ◽

2012 ◽

Cited By ~ 3

Author(s):

Pedram Razavi ◽

Isabelle Ferain ◽

Samaresh Das ◽

Ran Yu ◽

Nima Dehdashti Akhavan ◽

...

Keyword(s):

Gate Delay ◽

Nanowire Transistors ◽

Energy Delay Product

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Characteristics control of single electron transistor with floating gate by charge pump circuit

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193382 ◽

2012 ◽

Author(s):

Motoki Nozue ◽

Ryota Suzuki ◽

Hirotoshi Nomura ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Charge Pump ◽

Floating Gate ◽

Single Electron ◽

Single Electron Transistor ◽

Charge Pump Circuit

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Orientational and strain dependence of the mobility in silicon nanowires

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193354 ◽

2012 ◽

Cited By ~ 1

Author(s):

Y. M. Niquet ◽

C. Delerue ◽

D. Rideau

Keyword(s):

Silicon Nanowires ◽

Strain Dependence

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Top-down process of Germanium nanowires using EBL exposure of Hydrogen Silsesquioxane resist

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193378 ◽

2012 ◽

Cited By ~ 3

Author(s):

Ran Yu ◽

Samaresh Das ◽

Richard Hobbs ◽

Yordan Georgiev ◽

Isabelle Ferain ◽

...

Keyword(s):

Hydrogen Silsesquioxane ◽

Top Down ◽

Germanium Nanowires

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FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193384 ◽

2012 ◽

Cited By ~ 3

Author(s):

B. Sklenard ◽

C. Xu ◽

P. Batude ◽

B. Previtali ◽

C. Tabone ◽

...

Keyword(s):

Low Temperature

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Mobility and strain effects for and oriented silicon and SiGe transistor channels

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193343 ◽

2012 ◽

Author(s):

S. Flachowsky ◽

T. Herrmann ◽

J. Hontschel ◽

R. Illgen ◽

Shiang Yang Ong ◽

...

Keyword(s):

Strain Effects

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Author index

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193394 ◽

2012 ◽

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Strained silicon nanowire array MOSFETs with high-k/metal gate stack

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193355 ◽

2012 ◽

Cited By ~ 1

Author(s):

S. Richter ◽

S. Trellenkamp ◽

M. Schmidt ◽

A. Schafer ◽

K. K. Bourdelle ◽

...

Keyword(s):

Silicon Nanowire ◽

Nanowire Array ◽

Strained Silicon ◽

Metal Gate ◽

Gate Stack ◽

High K ◽

Silicon Nanowire Array

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Origins of the short channel effects increase in III-V nMOSFET technologies

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193348 ◽

2012 ◽

Cited By ~ 6

Author(s):

T. Dutta ◽

Q. Rafhay ◽

R. Clerc ◽

J. Lacord ◽

S. Monfray ◽

...

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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On the use of nanoelectronic logic cells based on metallic Single Electron Transistors

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193381 ◽

2012 ◽

Cited By ~ 3

Author(s):

Mohamed Amine Bounouar ◽

Arnaud Beaumont ◽

Francis Calmon ◽

Dominique Drouin

Keyword(s):

Single Electron ◽

Single Electron Transistors ◽

Logic Cells ◽

Electron Transistors

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2012 13th International Conference on Ultimate Integration on Silicon (ULIS)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Intrinsic gate delay and energy-delay product in junctionless nanowire transistors

Characteristics control of single electron transistor with floating gate by charge pump circuit

Orientational and strain dependence of the mobility in silicon nanowires

Top-down process of Germanium nanowires using EBL exposure of Hydrogen Silsesquioxane resist

FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)

Mobility and strain effects for and oriented silicon and SiGe transistor channels

Author index

Strained silicon nanowire array MOSFETs with high-k/metal gate stack

Origins of the short channel effects increase in III-V nMOSFET technologies

On the use of nanoelectronic logic cells based on metallic Single Electron Transistors

2012 13th International Conference on Ultimate Integration on Silicon (ULIS)
Latest Publications