Reduced pressure chemical vapor deposition of Si/Si1−yCy heterostructures forn-type metal–oxide–semiconductor transistors
2005 ◽
Vol 277
(1-4)
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pp. 114-123
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1993 ◽
Vol 32
(Part 1, No. 1B)
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pp. 438-441
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2005 ◽
Vol 23
(1)
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pp. 42
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1999 ◽
Vol 38
(Part 2, No. 10A)
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pp. L1099-L1101
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1997 ◽
Vol 144
(1)
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pp. 214-217
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Keyword(s):
1995 ◽
Vol 34
(Part 1, No. 2A)
◽
pp. 476-481
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