On the mobility of n‐channel metal–oxide–semiconductor transistors prepared by low‐pressure rapid thermal chemical vapor deposition

1995 ◽  
Vol 66 (1) ◽  
pp. 73-75 ◽  
Author(s):  
P. K. McLarty ◽  
V. Misra ◽  
W. Hill ◽  
J. J. Wortman ◽  
J. R. Hauser ◽  
...  
2005 ◽  
Vol 87 (5) ◽  
pp. 051922 ◽  
Author(s):  
N. Lu ◽  
W. Bai ◽  
A. Ramirez ◽  
C. Mouli ◽  
A. Ritenour ◽  
...  

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