Metallic tin reactive sputtering in a mixture Ar–O2: Comparison between an amplified and a classical magnetron discharge

R. Snyders; R. Gouttebaron; J. P. Dauchot; M. Hecq

doi:10.1116/1.1759349

Metallic tin reactive sputtering in a mixture Ar–O2: Comparison between an amplified and a classical magnetron discharge

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1759349 ◽

2004 ◽

Vol 22 (4) ◽

pp. 1540-1545 ◽

Cited By ~ 9

Author(s):

R. Snyders ◽

R. Gouttebaron ◽

J. P. Dauchot ◽

M. Hecq

Keyword(s):

Reactive Sputtering ◽

Magnetron Discharge

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Generation of Positive and Negative Oxygen Ions in Magnetron Discharge During Reactive Sputtering of Alumina

Plasma Processes and Polymers ◽

10.1002/ppap.201000064 ◽

2010 ◽

Vol 7 (11) ◽

pp. 910-914 ◽

Cited By ~ 13

Author(s):

Petr Pokorný ◽

Jiří Bulíř ◽

Ján Lančok ◽

Jindřich Musil ◽

Michal Novotný

Keyword(s):

Reactive Sputtering ◽

Magnetron Discharge ◽

Oxygen Ions

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Properties of millisecond-scale modulated pulsed power magnetron discharge applied for reactive sputtering of zirconia

Plasma Sources Science and Technology ◽

10.1088/1361-6595/abf369 ◽

2021 ◽

Author(s):

Andrey V Kaziev ◽

Dobrynya V Kolodko ◽

Nikita S Sergeev

Keyword(s):

Reactive Sputtering ◽

Pulsed Power ◽

Magnetron Discharge

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Mass‐to‐charge ion composition of plasma in a magnetron discharge with reactive sputtering of titanium target

Plasma Processes and Polymers ◽

10.1002/ppap.202000210 ◽

2020 ◽

Author(s):

Andrey V. Tyunkov ◽

Victor A. Burdovitsin ◽

Efim M. Oks ◽

Maxim V. Shandrikov ◽

Yury G. Yushkov ◽

...

Keyword(s):

Reactive Sputtering ◽

Ion Composition ◽

Magnetron Discharge ◽

Titanium Target

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Study on reactive sputtering of titanium in the linear magnetron discharge

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2006.08.111 ◽

2006 ◽

Vol 201 (6) ◽

pp. 3571-3576 ◽

Cited By ~ 2

Author(s):

B. Kułakowska-Pawlak ◽

J. Walkowicz

Keyword(s):

Reactive Sputtering ◽

Magnetron Discharge

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Preparation and characterization of thin films of carbon nitride

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100136891 ◽

1995 ◽

Vol 53 ◽

pp. 104-105

Author(s):

L. Wan ◽

R. F. Egerton

Keyword(s):

Carbon Nitride ◽

Arc Discharge ◽

Ion Beam ◽

Chemical Vapor ◽

Reactive Sputtering ◽

Vacuum Arc ◽

Specimen Preparation ◽

Bonding Structure ◽

Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

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