High-k titanium silicate thin films grown by reactive magnetron sputtering for complementary metal–oxide–semiconductor applications

2004 ◽  
Vol 22 (3) ◽  
pp. 851 ◽  
Author(s):  
D. Brassard ◽  
D. K. Sarkar ◽  
M. A. El Khakani ◽  
L. Ouellet
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Titanium Silicate ◽  
High K

scholarly journals The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Materials ◽  
2018 ◽  
Vol 11 (7) ◽  
pp. 1253 ◽  
Author(s):  
Weifeng Zheng ◽  
Yue Chen ◽  
Xihong Peng ◽  
Kehua Zhong ◽  
Yingbin Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Contact Potential Difference ◽  
Phase Evolution ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Raman Spectrometry ◽  
Contact Potential

P-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, and their mixture was established. Moreover, based on Kelvin Probe Force Microscopy (KPFM) and conductive AFM (C-AFM), by measuring the contact potential difference (VCPD) and the field emission property, the work function and the carrier concentration were obtained, which can be used to distinguish the different types of copper oxide states. The band gaps of the Cu2O, Cu4O3, and CuO thin films were observed to be (2.51 ± 0.02) eV, (1.65 ± 0.1) eV, and (1.42 ± 0.01) eV, respectively. The resistivities of Cu2O, Cu4O3, and CuO thin films are (3.7 ± 0.3) × 103 Ω·cm, (1.1 ± 0.3) × 103 Ω·cm, and (1.6 ± 6) × 101 Ω·cm, respectively. All the measured results above are consistent.

SiGe channels for VT control of high-k metal gate transistors for 32nm complementary metal oxide semiconductor technology and beyond

2012 ◽  
Vol 520 (8) ◽  
pp. 3170-3174 ◽  
Author(s):  
Carsten Reichel ◽  
Joerg Schoenekess ◽  
Stephan Kronholz ◽  
Gunda Beernink ◽  
Annekathrin Zeun ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Technology ◽  
Metal Gate ◽  
High K

Characterization of metal-oxide thin films deposited by plasma-assisted reactive magnetron sputtering

2010 ◽  
Vol 8 (S1) ◽  
pp. 73-77 ◽  
Author(s):  
Stefan Jakobs Stefan Jakobs ◽  
Marc Lappschies Marc Lappschies ◽  
Uwe Schallenberg Uwe Schallenberg ◽  
Olaf Stenzel Olaf Stenzel ◽  
Steffen Wilbrandt Steffen Wilbrandt
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Metal Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films

Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices

2000 ◽  
Vol 88 (12) ◽  
pp. 7192-7196 ◽  
Author(s):  
E. K. Evangelou ◽  
N. Konofaos ◽  
X. A. Aslanoglou ◽  
C. A. Dimitriadis ◽  
P. Patsalas ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Electrode ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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