Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices

2000 ◽  
Vol 88 (12) ◽  
pp. 7192-7196 ◽  
Author(s):  
E. K. Evangelou ◽  
N. Konofaos ◽  
X. A. Aslanoglou ◽  
C. A. Dimitriadis ◽  
P. Patsalas ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Electrode ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography

2013 ◽  
Vol 6 (4) ◽  
pp. 046502 ◽  
Author(s):  
Koji Inoue ◽  
Hisashi Takamizawa ◽  
Yasuo Shimizu ◽  
Fumiko Yano ◽  
Takeshi Toyama ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Atom Probe Tomography ◽  
Semiconductor Devices ◽  
Three Dimensional ◽  
Atom Probe ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices

2007 ◽  
Vol 101 (6) ◽  
pp. 064509 ◽  
Author(s):  
M. Porti ◽  
M. Avidano ◽  
M. Nafría ◽  
X. Aymerich ◽  
J. Carreras ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Electrical Characterization ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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