Secondary defect formation in bonded silicon-on-insulator after boron implantation

2004 ◽  
Vol 22 (1) ◽  
pp. 459 ◽  
Author(s):  
A. F. Saavedra ◽  
A. C. King ◽  
K. S. Jones ◽  
E. C. Jones ◽  
K. K. Chan
Keyword(s):  
Defect Formation ◽  
Silicon On Insulator ◽  
Boron Implantation ◽  
Secondary Defect

Secondary defect formation in self-ion irradiated silicon

1996 ◽  
pp. 216-221
Author(s):  
R.D. Goldberg ◽  
T.W. Simpson ◽  
I.V. Mitchell ◽  
P.J. Simpson ◽  
M. Prikryl ◽  
...  
Keyword(s):  
Defect Formation ◽  
Secondary Defect

Secondary defect formation in self-ion irradiated silicon

1995 ◽  
Vol 106 (1-4) ◽  
pp. 216-221 ◽  
Author(s):  
R.D. Goldberg ◽  
T.W. Simpson ◽  
I.V. Mitchell ◽  
P.J. Simpson ◽  
M. Prikryl ◽  
...  
Keyword(s):  
Defect Formation ◽  
Secondary Defect

Electrical activation in silicon-on-insulator after low energy boron implantation

2004 ◽  
Vol 96 (4) ◽  
pp. 1891-1898 ◽  
Author(s):  
Antonio F. Saavedra ◽  
Kevin S. Jones ◽  
Mark E. Law ◽  
Kevin K. Chan ◽  
Erin C. Jones
Keyword(s):  
Low Energy ◽  
Silicon On Insulator ◽  
Electrical Activation ◽  
Boron Implantation

Secondary Defect Formation And Gettering in Mev Self-Implanted Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
R. A. Brown ◽  
O. Kononchuk ◽  
Z. Radzimski ◽  
G. A. Rozgonyi ◽  
F. Gonzalez
Keyword(s):  
Defect Formation ◽  
Extended Defects ◽  
Near Surface ◽  
Projected Range ◽  
Annealing Conditions ◽  
Float Zone ◽  
Transmission Electron ◽  
Secondary Defect ◽  
Secondary Ion

AbstractSecondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.

Positron-lifetime study of secondary-defect formation in quenched aluminum

1985 ◽  
Vol 31 (3) ◽  
pp. 1302-1307 ◽  
Author(s):  
Cs. Szeles ◽  
Zs. Kajcsos ◽  
A. Vértes
Keyword(s):  
Positron Lifetime ◽  
Defect Formation ◽  
Secondary Defect

Effect of temperature on defect formation during oxygen implantation of silicon-on-insulator material

1990 ◽  
Vol 48 (4) ◽  
pp. 578-579
Author(s):  
C. O. Jung ◽  
S. Visitsemgtrakul ◽  
S.J. Krause ◽  
P. Roitman ◽  
B. Cordts
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Defect Structure ◽  
Defect Formation ◽  
Silicon On Insulator ◽  
Effect Of Temperature ◽  
Implantation Temperature ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Oxygen implanted silicon-on-insulator material, SIMOX, (Separation by IMplanted Oxygen) provides improved speed and radiation hardness over bulk silicon for integrated circuits which are built on the thin superficial Si layer above the buried oxide layer. A high quality superficial Si layer is required, but may be degraded by high defect densities of 109 to 1010 cm-2 in annealed SIMOX. Defect densities have been reduced down to 106cm-2 or less. They were achieved with a final high temperature annealing step (1300-1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. The defect structure developed during implantation, which is strongly affected by temperature, plays a significant role in the defect structure in the annealed material. In this work we are reporting on the effect of implantation temperature on defect formation and also some new details on the structure of the defects that are present.

The calculation of secondary defect formation at ion implantation of silicon

1976 ◽  
Vol 37 (1) ◽  
pp. 57-64 ◽  
Author(s):  
N. P. Morozov ◽  
D. I. Tetelbaum ◽  
P. V. Pavlov ◽  
E. I. Zorin
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Secondary Defect
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