Positron-lifetime study of secondary-defect formation in quenched aluminum

1985 ◽  
Vol 31 (3) ◽  
pp. 1302-1307 ◽  
Author(s):  
Cs. Szeles ◽  
Zs. Kajcsos ◽  
A. Vértes
Keyword(s):  
Positron Lifetime ◽  
Defect Formation ◽  
Secondary Defect

Secondary defect formation in self-ion irradiated silicon

1996 ◽  
pp. 216-221
Author(s):  
R.D. Goldberg ◽  
T.W. Simpson ◽  
I.V. Mitchell ◽  
P.J. Simpson ◽  
M. Prikryl ◽  
...  
Keyword(s):  
Defect Formation ◽  
Secondary Defect

Secondary defect formation in self-ion irradiated silicon

1995 ◽  
Vol 106 (1-4) ◽  
pp. 216-221 ◽  
Author(s):  
R.D. Goldberg ◽  
T.W. Simpson ◽  
I.V. Mitchell ◽  
P.J. Simpson ◽  
M. Prikryl ◽  
...  
Keyword(s):  
Defect Formation ◽  
Secondary Defect

Secondary Defect Formation And Gettering in Mev Self-Implanted Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
R. A. Brown ◽  
O. Kononchuk ◽  
Z. Radzimski ◽  
G. A. Rozgonyi ◽  
F. Gonzalez
Keyword(s):  
Defect Formation ◽  
Extended Defects ◽  
Near Surface ◽  
Projected Range ◽  
Annealing Conditions ◽  
Float Zone ◽  
Transmission Electron ◽  
Secondary Defect ◽  
Secondary Ion

AbstractSecondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.

Positron Lifetime Study of the Crystal Evolution and Defect Formation Processes in a Scintillating Glass

2009 ◽  
Vol 92 (10) ◽  
pp. 2422-2424 ◽  
Author(s):  
Jiaxiang Nie ◽  
Runsheng Yu ◽  
Baoyi Wang ◽  
Yuwen Ou ◽  
Yurong Zhong ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Defect Formation ◽  
Formation Processes

The calculation of secondary defect formation at ion implantation of silicon

1976 ◽  
Vol 37 (1) ◽  
pp. 57-64 ◽  
Author(s):  
N. P. Morozov ◽  
D. I. Tetelbaum ◽  
P. V. Pavlov ◽  
E. I. Zorin
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Secondary Defect
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