Difference of secondary defect formation by high energy B+ and Al+ implantation into 4H–SiC

2002 ◽  
Vol 91 (7) ◽  
pp. 4136-4142 ◽  
Author(s):  
Toshiyuki Ohno ◽  
Naoto Kobayashi
Keyword(s):  
Defect Formation ◽  
High Energy ◽  
Secondary Defect

Reduction of Secondary Defects in High Energy O-Implanted Si by High Energy Si Irradiation

1992 ◽  
Vol 279 ◽  
Author(s):  
S. L. Ellingboe ◽  
M. C. Ridgway
Keyword(s):  
High Temperature ◽  
Defect Structure ◽  
Low Dose ◽  
Defect Formation ◽  
Volume Fraction ◽  
High Energy ◽  
High Dose ◽  
High Temperature Annealing ◽  
Before And After ◽  
Secondary Defect

ABSTRACTThe effect of 4.2 MeV, low dose Si irradiation before annealing of 1 MeV, high dose O-implanted Si has been studied. Si irradiation results in differences in the defect structure both before and after high temperature annealing. With no Si irradiation, annealing results in polycrystalline Si (polySi) formation and microtwinning at the front SiO2/Si interface. With Si irradiation, the polySi volume fraction is greatly reduced after annealing, twinned Si having grown in its place. Si irradiation has no effect on Si inclusions within the SiO2 layer. The dependence of secondary defect formation on Si dose and implant temperature is presented. In particular, Si irradiation at low implant temperatures (150°C) and moderate doses (5×1016 cm−2) is shown to be most effective in the reduction of the polySi volume fraction at the front SiO2/Si interface.

Difference in Secondary Defects between High Energy B+ and Al+ implanted 4H-SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
Toshiyuki Ohno ◽  
Naoto Kobayashi
Keyword(s):  
Activation Energy ◽  
Dislocation Loop ◽  
Lattice Strain ◽  
Volume Concentration ◽  
Defect Formation ◽  
High Energy ◽  
Defect Size ◽  
Ion Density ◽  
Secondary Defect ◽  
Ion Species

ABSTRACTThe differences of secondary defects between B+ and Al+ implanted layers in high-energy implantation were investigated. At the same volume concentration of implanted ion, density of secondary defects in Al+ implanted layer is higher than that in B+ implanted layer. On the contrary, mean defect size in B+ implanted layer is larger than that in Al+ implanted layer. The structure of secondary defect is thought to be a dislocation loop formed by an extra Si-C layer or localized lattice strain correlated to agglomerated interstitials. The amount of interstitials used for secondary defect formation is estimated. It almost coincides the same amount of implanted ions, and this correlation doesn't depend on ion species. B+ and Al+ implanted layers have different activation energy for secondary defect formation. This result means that they have different agglomerating mechanism of interstitials, which cause the differences of defect size and density between them.

scholarly journals Dislocation Loop Generation Differences between Thin Films and Bulk in EFDA Pure Iron under Self-Ion Irradiation at 20 MeV

Metals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 2000
Author(s):  
Marcelo Roldán ◽  
Fernando José Sánchez ◽  
Pilar Fernández ◽  
Christophe J. Ortiz ◽  
Adrián Gómez-Herrero ◽  
...  
Keyword(s):  
Thin Films ◽  
Computational Models ◽  
Defect Formation ◽  
Ion Irradiation ◽  
Damage Zone ◽  
High Energy ◽  
Model Material ◽  
Dislocation Nucleation ◽  
Dislocation Loops ◽  
Experimental Conditions

In the present investigation, high-energy self-ion irradiation experiments (20 MeV Fe+4) were performed on two types of pure Fe samples to evaluate the formation of dislocation loops as a function of material volume. The choice of model material, namely EFDA pure Fe, was made to emulate experiments simulated with computational models that study defect evolution. The experimental conditions were an ion fluence of 4.25 and 8.5 × 1015 ions/cm2 and an irradiation temperature of 350 and 450 °C, respectively. First, the ions pass through the samples, which are thin films of less than 100 nm. With this procedure, the formation of the accumulated damage zone, which is the peak where the ions stop, and the injection of interstitials are prevented. As a result, the effect of two free surfaces on defect formation can be studied. In the second type of experiments, the same irradiations were performed on bulk samples to compare the creation of defects in the first 100 nm depth with the microstructure found in the whole thickness of the thin films. Apparent differences were found between the thin foil irradiation and the first 100 nm in bulk specimens in terms of dislocation loops, even with a similar primary knock-on atom (PKA) spectrum. In thin films, the most loops identified in all four experimental conditions were b ±a0<100>{200} type with sizes of hundreds of nm depending on the experimental conditions, similarly to bulk samples where practically no defects were detected. These important results would help validate computational simulations about the evolution of defects in alpha iron thin films irradiated with energetic ions at large doses, which would predict the dislocation nucleation and growth.

Secondary defect formation in self-ion irradiated silicon

1996 ◽  
pp. 216-221
Author(s):  
R.D. Goldberg ◽  
T.W. Simpson ◽  
I.V. Mitchell ◽  
P.J. Simpson ◽  
M. Prikryl ◽  
...  
Keyword(s):  
Defect Formation ◽  
Secondary Defect

Secondary defect formation in self-ion irradiated silicon

1995 ◽  
Vol 106 (1-4) ◽  
pp. 216-221 ◽  
Author(s):  
R.D. Goldberg ◽  
T.W. Simpson ◽  
I.V. Mitchell ◽  
P.J. Simpson ◽  
M. Prikryl ◽  
...  
Keyword(s):  
Defect Formation ◽  
Secondary Defect

Some Computer Simulations of Semiconductor Thin Film Growth and Strain Relaxation in a Unified Atomistic and Kinetic Model

1995 ◽  
Vol 408 ◽  
Author(s):  
A. Madhukar ◽  
W. Yu ◽  
R. Viswanathan ◽  
P. Chen
Keyword(s):  
Kinetic Model ◽  
Defect Formation ◽  
Kinetic Monte Carlo ◽  
Strain Relaxation ◽  
High Energy ◽  
Fixed Number ◽  
Dislocation Nucleation ◽  
Relative Significance ◽  
Stepped Surfaces ◽  
Kinetic Processes

AbstractAn overview is provided of an evolving atomistic and kinetic model of semiconductor growth that unifies the main features of strain relaxation in low and high lattice misfit heteroepitaxy. The model reveals a kinetic pathway for dislocation formation during growth with little or no energy cost at low misfits, thus providing a way out of the longstanding dilemma of too high dislocation nucleation energies predicted by classical theories of the equilibrium behaviour of a fixed number of particles at low misfits. The essential kinetic processes underlying the model are identified on the basis of comparison of the predictions of kinetic Monte-Carlo simulations of growth with real-time or in-situ data obtained in such experiments as reflection high-energy electron diffraction (RHEED) and scanning probe microscopy (SPM). Relative significance of these atomistic kinetic processes is shown to naturally lead to strain relaxation via defect initiation at low misfits while maintaining smooth surface morphology or at high misfits change to 3-dimensional morphology while initially maintaining coherence. The potential role of steps in providing sources for defect formation is examined through molecular dynamics simulations of Ge overlayers on Si (001) stepped surfaces.

Effects of substrates and catalysts compositions on the crystalline quality of InP Nanowires grown on SrTiO3 (001), Si(001) and InP (111)

2010 ◽  
Vol 1258 ◽  
Author(s):  
Khalid Naji ◽  
Herve Dumont ◽  
Guillaume Saint-Girons ◽  
Gilles Patriarche ◽  
michel Gendry
Keyword(s):  
Molecular Beam ◽  
Defect Formation ◽  
High Energy ◽  
Growth Direction ◽  
Crystalline Quality ◽  
Metal Catalyst ◽  
Cubic Phase ◽  
High Energy Electron ◽  
Transmission Electron

AbstractIndium phosphide (InP) nanowires (NWs) were grown by molecular beam epitaxy on various substrates including SrTiO3 (001), Si (001) and InP (111) at a growth temperature of 380°C. We used the Vapor Liquid Solid assisted method with Au as a metal catalyst. The composition of the catalyst particles and the crystalline structure of the nanowires were compared using reflection high energy electron diffraction, scanning electron microscopy and high resolution transmission electron microscope. It is found that InP nanowires grown onto InP and SrTiO3 substrates are structurally defects free with a wurtzite structure. On Si (001) substrates, the presence of stacking faults and cubic phase insertion along the growth direction is observed. The effect of the substrate on the composition of catalyst droplets and consequently on the crystalline quality of the nanowires is discussed for the conditions of nucleation and defect formation.

Secondary Defect Formation And Gettering in Mev Self-Implanted Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
R. A. Brown ◽  
O. Kononchuk ◽  
Z. Radzimski ◽  
G. A. Rozgonyi ◽  
F. Gonzalez
Keyword(s):  
Defect Formation ◽  
Extended Defects ◽  
Near Surface ◽  
Projected Range ◽  
Annealing Conditions ◽  
Float Zone ◽  
Transmission Electron ◽  
Secondary Defect ◽  
Secondary Ion

AbstractSecondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.

Positron-lifetime study of secondary-defect formation in quenched aluminum

1985 ◽  
Vol 31 (3) ◽  
pp. 1302-1307 ◽  
Author(s):  
Cs. Szeles ◽  
Zs. Kajcsos ◽  
A. Vértes
Keyword(s):  
Positron Lifetime ◽  
Defect Formation ◽  
Secondary Defect

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

2022 ◽  
Author(s):  
Andrei Ivanovich Titov ◽  
Konstantin Karabeshkin ◽  
Andrei Struchkov ◽  
Platon Karaseov ◽  
Alexander Azarov
Keyword(s):  
Defect Formation ◽  
Deep Understanding ◽  
Structural Disorder ◽  
High Energy ◽  
Radiation Tolerance ◽  
Defect Annealing ◽  
Argon Ions ◽  
Fluorine Ions ◽  
Radiation Hard ◽  
Crystal Bulk

Abstract Realization of radiation-hard electronic devices able to work in harsh environments requires deep understanding the processes of defect formation/evolution occurring in semiconductors bombarded by energetic particles. In the present work we address such intriguing radiation phenomenon as high radiation tolerance of GaN and analyze structural disorder employing advanced co-irradiation schemes where low and high energy implants with different ions have been used. Channeling analysis revealed that the interplay between radiation-stimulated defect annealing and defect stabilization by implanted atoms dominates defect formation in the crystal bulk. Furthermore, the balance between these two processes depends on implanted species. In particular, strong damage enhancement leading to the complete GaN bulk amorphization observed for the samples pre-implanted with fluorine ions, whereas the co-irradiation of the samples pre-implanted with such elements as neon, phosphorus, and argon ions leads to a decrease of the damage.

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