Structural, electrical, and optical properties of diamondlike carbon films deposited by dc magnetron sputtering

2003 ◽  
Vol 21 (6) ◽  
pp. L23-L27 ◽  
Author(s):  
E. Broitman ◽  
O. P. A. Lindquist ◽  
N. Hellgren ◽  
L. Hultman ◽  
B. C. Holloway
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Carbon Films ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Diamondlike Carbon

scholarly journals Electrical and optical properties of Ga-doped ZnO thin films deposited by DC magnetron sputtering

2020 ◽  
Vol 4 (1) ◽  
pp. 15
Author(s):  
Lukman Nulhakim ◽  
Monna Rozana ◽  
Brian Yuliarto ◽  
Hisao Makino
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Transparent Conducting Oxide ◽  
Visible Range ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Doped Zno ◽  
Ar Gas

The electrical and optical properties of Ga-doped ZnO (GZO) thin film prepared by direct current (dc) magnetron sputtering were investigated. The GZO thin film was deposited on a glass substrate at a substrate temperature (Ts) of room temperature (RT), 150 °C, and 200 °C using DC power of 100 W and an Ar gas flow rate of 450 sccm. The thickness of films was maintained at about 200 nm by controlling the deposition rate of about 12.5 nm/minute. The result showed that the electrical properties improved with increasing Ts. The films deposited at Ts of 200 °C showed the lowest resistivity, highest hall mobility, and carrier concentration compared to other Ts. The average transmittance of the films in the visible range (380-750 nm) was approximately 86.04%. The value of the optical band gap (Eg) was approximately 3.8 eV. The results suggested that GZO films deposited by DC magnetron sputtering at Ts of 200 °C can be applied to transparent conducting oxide (TCO) as an electrode in optoelectronic applications such as solar cells, LEDs and display technology.

scholarly journals Effects of Bottom Layer Sputtering Pressures and Annealing Temperatures on the Microstructures, Electrical and Optical Properties of Mo Bilayer Films Deposited by RF/DC Magnetron Sputtering

2019 ◽  
Vol 9 (7) ◽  
pp. 1395 ◽  
Author(s):  
Haili Zhao ◽  
Jingpei Xie ◽  
Aixia Mao
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Bottom Layer ◽  
Bilayer Film ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Bilayer Films ◽  
Sputtering Pressure

Most of the molybdenum (Mo) bilayer films are deposited by direct current (DC) magnetron sputtering at the bottom and the top layer (DC/DC). However, the deposition of Mo bilayer film by radio frequency (RF) Mo bottom layer and DC Mo top layer magnetron sputtering has been less studied by researchers. In this paper, the bottom layer of Mo bilayer film was deposited by RF magnetron sputtering to maintain its good adhesion and high reflectance, and the top layer was deposited by DC magnetron sputtering to obtain good conductivity (RF/DC). Generally, the bottom layer sputtering pressure is relatively random, in this paper, the effects of the bottom layer RF sputtering pressures on the microstructures and properties of Mo bilayer films were first studied in detail. Next, in order to further improve their properties, the as-prepared Mo bilayer films at 0.4 Pa bottom layer RF sputtering pressure were annealed at different temperatures and then investigated. Specifically, Mo bilayer films were deposited on soda-lime glass substrates by RF/DC magnetron sputtering at different bottom layer RF sputtering pressures in the range of 0.4–1.2 Pa, the powers of bottom layer RF sputtering and top layer DC sputtering were 120 W and 100 W, respectively. Then, Mo bilayer films, prepared at a bottom layer sputtering pressure of 0.4 Pa and top layer sputtering pressure of 0.3 Pa, were annealed for 30 min at various temperatures in the range of 100–400 °C. The effects of bottom layer sputtering pressures and the annealing temperatures on the microstructures, electrical and optical properties of Mo bilayer films were clarified by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic-force microscopy (AFM), and ultraviolet (UV)-visible spectra, respectively. It is shown that with decreasing bottom layer sputtering pressure from 1.2 to 0.4 Pa and increasing annealing temperature from 100 to 400 °C, the crystallinity, electrical and optical properties of Mo bilayer films were improved correspondingly. The optimized Mo bilayer film was prepared at the top layer sputtering pressure of 0.3 Pa, the bottom layer sputtering pressure of 0.4 Pa and the annealing temperature of 400 °C. The extremely low resistivity of 0.92 × 10−5 Ω.cm was obtained. The photo-conversion efficiency of copper indium gallium selenium (CIGS) solar cell with the optimized Mo bilayer film as electrode was up to as high as 13.5%.

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