Electrical and optical properties of Nb-doped TiO2 films deposited by dc magnetron sputtering using slightly reduced Nb-doped TiO2−x ceramic targets

2010 ◽  
Vol 28 (4) ◽  
pp. 851-855 ◽  
Author(s):  
Yasushi Sato ◽  
Yuta Sanno ◽  
Chihiro Tasaki ◽  
Nobuto Oka ◽  
Toshihisa Kamiyama ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Tio2 Films ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Doped Tio2 ◽  
Ceramic Targets

TiO2 films prepared by DC magnetron sputtering from ceramic targets

Vacuum ◽  
2002 ◽  
Vol 68 (1) ◽  
pp. 31-38 ◽  
Author(s):  
Henryk Tomaszewski ◽  
Hilde Poelman ◽  
Diederik Depla ◽  
Dirk Poelman ◽  
Roger De Gryse ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tio2 Films ◽  
Dc Magnetron Sputtering ◽  
Ceramic Targets

Nb-doped TiO2 films for transparent conductive electrodes with low resistivity deposited by dc magnetron sputtering using a TiO2-x–Nb2O5-x target

2008 ◽  
Vol 1109 ◽  
Author(s):  
Yasushi Sato ◽  
Yuta Sanno ◽  
Nobuto Oka ◽  
Toshihisa Kamiyama ◽  
Yuzo Shigesato
Keyword(s):  
Magnetron Sputtering ◽  
Hall Mobility ◽  
Carrier Density ◽  
Visible Region ◽  
Tio2 Films ◽  
Dc Magnetron Sputtering ◽  
High Transparency ◽  
Doped Tio2 ◽  
Post Annealing ◽  
Transparent Conductive Electrodes

AbstractNb-doped anatase TiO2 films were deposited on unheated glass by dc magnetron sputtering using a slightly reduced TiO2-x–Nb2O5-x target with oxygen flow ratios [O2/(Ar+O2)] in the range from 0.00 to 0.20%. After post-annealing in a vacuum (6 × 10−4 Pa) at 500 and 600 °C for 1 h, the films were crystallized into the polycrystalline anatase TiO2 structure. The resistivity of the both films decreased to 6.3-6.8 × 10−4 Ω·cm with increasing [O2/(Ar+O2)] to 0.10%, where the carrier density and Hall mobility were 1.9-2.0 × 1021 cm−3 and 4.9-5.0 cm2·V−1·s−1, respectively. The films exhibited high transparency of over 60-70% in the visible region of light.

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