Submillimeter-wavelength plasma chemical diagnostics for semiconductor manufacturing

2003 ◽  
Vol 21 (5) ◽  
pp. 2067 ◽  
Author(s):  
Eric C. Benck ◽  
Guerman Yu. Golubiatnikov ◽  
Gerald T. Fraser ◽  
Bing Ji ◽  
Stephen A. Motika ◽  
...  
Keyword(s):  
Semiconductor Manufacturing ◽  
Plasma Chemical ◽  
Submillimeter Wavelength

Plasma Chemical Aspects of Magnetron Ion Etching with CF4/O2 and CF4/H2

1987 ◽  
Vol 98 ◽  
Author(s):  
A. A. Bright ◽  
S. Kaushik ◽  
G. S. Oehrlein
Keyword(s):  
Semiconductor Manufacturing ◽  
Plasma Chemistry ◽  
Operating Pressure ◽  
Plasma Chemical ◽  
Ion Etching ◽  
Ion Density ◽  
Atom Concentration ◽  
Manufacturing Applications ◽  
Etching System ◽  
Ionization Rates

ABSTRACTMagnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4, CF4/O2, and CF4/H2 with respect to the plasma chemistry and the interaction of the plasma with the etched substrate. The higher dissociation and ionization rates lead to significant changes in the species present in the plasma as compared to a conventional reactive ion etching (RIE) plasma. The F atom concentration in a CF4 magnetron plasma is much higher than in a RIE plasma. The addition of O2 leads to only a small further enhancement and produces a decrease in the Si etch rate. Addition of H2 suppresses the F atom concentration slightly, produces very little C-F polymer, and does not lead to highly selective etching of SiO2 over Si. The highly dissociated species in the magnetron plasma produce less C-F polymer, both on the wafer and on the chamber walls, relative to RIE.

Cermet TiCN – Ni – Mo – C plasma coatings synthesized from plasma-chemical nanosized powders

2018 ◽  
pp. 34-45 ◽  
Author(s):  
V. I. Kalita ◽  
◽  
A. A. Radyuk ◽  
D. I. Komlev ◽  
A. B. Mikhailova ◽  
...  
Keyword(s):  
Plasma Chemical ◽  
Nanosized Powders ◽  
Plasma Coatings

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition
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